Multilayer semi-insulating film for hermetic wafer passivation and method for making same

A passivation overcoat for hermetically sealing monocrystalline semiconductor termination regions, comprising:

• a multilayer inorganic film, including:
• a layer of amorphous silicon,
• a layer of oxygen doped polycrystalline silicon on said amorphous silicon layer and an interface layer of polipilicon mixed with said amorphous silicon layer.
• a layer of silicon rich oxynitride on said oxygen doped polycrystalline silicon layer and an interface layer of oxynitride mixed with said oxygen doped polycrystalline silicon layer,
• and a layer of silicon nitride on said oxynitride layer and an interface layer of nitride mixed with said oxynitride layer.
• and a layer of organic polyimide overlying said multilayer inorganic film.

A hermetic passivation film for a monocrystalline silicon semiconductor termination comprising:

• a multilayer semi-insulating film, including:
• a layer of undoped amorphous silicon film on said termination,
• a layer of oxygen doped polycrystalline silicon overlying said undoped amorphous silicon film of thickness between about 10.degree. to 300.degree., said layer of oxygen doped polycrystalline silicon comprising microcrystalline grains of silicon saturated with oxygen and a surrounding partial oxide between the grains, and
• an interface layer therebetween, comprising a mixture of undoped amorphous silicon and said oxygen doped polycrystalline silicon.