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US 4,901,127 AGranted
Circuit including a combined insulated gate bipolar transistor/MOSFET
AssigneeGeneral Electric Company
InventorsTat-Sing P. Chow, Bantval J. Baliga
Life of this patent
Estimating the term…
Abstract
An IGBT and FET are integrated in a common semiconductor body and share common source/emitter, base and drift regions and an insulated gate electrode. The ON-resistance and turn-off time of this device can be controlled by connecting the drain and collector electrodes to one main terminal for the device with a resistor between either the drain region/drift region interface or the collector junction and the main terminal of the device.
Claims31
A circuit comprising:
- a semiconductor device comprised of an insulated gate bipolar transistor and an MOSFET combined and integrated in a single body of semiconductor material, said body including:
- a drift region of one type conductivity,
- a base region of opposite type conductivity forming a first PN junction with said drift region,
- a source/emitter region of said one type conductivity disposed within and forming a second PN junction with said base region,
- said base region including a channel portion disposed between aid source and drift regions,
- a collector region of said opposite type conductivity forming a third PN junction with said drift region and spaced from said base region, and
- a drain region spaced from said base region, having said one type conductivity forming an interface with said drift region and being more heavily doped than said drift region;
- said semiconductor device further including:
- an insulated gate electrode disposed adjacent said channel portion of said base region for controlling the conductivity of said channel portion of said base region for charge carriers of said one type conductivity,
- a first electrode disposed in ohmic contact with said base and source/emitter regions and comprising a first main terminal of said circuit
- a drain electrode disposed in ohmic contact with said drain region, and
- a collector electrode disposed in ohmic contact with said collector region;
- and
- a drain/collector circuit connected to said device, said drain/collector circuit including said drain and collector regions, said drain and collector electrodes, a non-zero resistive impedance and a second main terminal.
11 more elements
A semiconductor integrated circuit comprising:
- a body of semiconductor material having first and second opposed major surfaces;
- a drift region disposed within said semiconductor body between said first and second major surfaces, having one type conductivity and extending to said first major surface;
- a base region having an opposite type conductivity extending into said drift region from said first major surface and forming a first PN junction with said drift region;
- a source/emitter region having said one type conductivity disposed within said base region and forming a second PN junction therewith and extending to said first major surface;
- said base region including a channel portion disposed adjacent said first major surface and extending between said source and drift regions;
- an insulated gate electrode disposed on said first major surface adjacent said channel portion of said base region for controlling the conductivity of said channel portion of said base region for charge carriers of said one conductivity type;
- a collector region of said opposite type conductivity forming a third PN junction with said drift region and spaced from said base region;
- a drain region of said one type conductivity disposed adjacent to said drift region and more heavily doped to said one type conductivity than said drift region;
- a first electrode disposed in ohmic contact with said source/emitter and base regions and comprising a first main terminal;
- a collector electrode disposed in ohmic contact with said collector region;
- a drain electrode disposed in ohmic contact with said drain region;
- and
- a drain/collector circuit connected to said device, said drain/collector circuit including said drain and collector regions, said drain and collector electrodes a non-zero resistive impedance and a second main terminal.
10 more elements
Dependencies are inferred from the claim text.