Radiation detector
AssigneeSiemens Aktiengesellschaft
InventorReiner Schulz
Life of this patent
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Abstract
A radiation detector has a number of detector elements disposed following each other in the direction of incoming radiation propagation. The radiation detector is integrally constructed of a semiconductor body having spaced surfaces disposed substantially parallel to the radiation propagation direction. One of the surfaces has a p-conductive region immediately therebelow, and the other surface has an n-conductive region immediately therebelow. At least one of the surfaces is sub-divided by a region extending transversely to the radiation propagation direction which has a lower conductivity than the adjacent regions. This section divides the semiconductor body into different detector elements.
Claims6
A detector for radiation arriving at an incoming radiation propagation direction, comprising:
- a semiconductor body having spaced surfaces disposed substantially parallel to the direction of radiation propagation;
- a region of first conductivity type disposed at one of said surfaces;
- a region of second conductivity type disposed at the other of said surfaces;
- a section of lower conductivity disposed in at least one of said regions and extending transversely to the direction of radiation propagation, said section of lower conductivity dividing said radiation detector into a plurality separate detector elements disposed following each other in the direction of incoming radiation propagation;
- and
- means attached to each of said regions for tapping an electrical signal from said individual detector elements.
A radiation detector comprising:
- a semiconductor body having spaced surfaces disposed substantially parallel to a direction of propagation of incoming radiation to be detected;
- a p-conductive region disposed at one of said surfaces;
- an n-conductive region disposed at the other of said surfaces;
- a first section of lower conductivity disposed in said p-conductive region;
- a second section of lower conductivity disposed in said n-conductive region, said first and second sections of lower conductivity being in registry and dividing said semiconductor body into a plurality of individual detector element;
- and
- electrode means attached to each of said p-conductive region and said n-conductive region for each of said individual detector elements.
Dependencies are inferred from the claim text.