US 4,901,032 AGranted

Digitally controlled variable power amplifier

AssigneeGeneral Electric Company

InventorJames J. Komiak

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Abstract

The invention relates to a digitally controlled variable power amplifier for radio frequency signals. The power amplifier has application to power amplifiers for driving the individual elements of a phased array radar system in which accurate tapering of the power supplied to individual antenna elements is desired for sidelobe control in the face of jamming and other circumstances. In this application, each power amplifier must maintain a stable phase transfer response and should remain at a high power transfer efficiency at each reduced power setting. This performance is achieved by the use of a power transistor of a segmented dual gate design. The segments of the second gate electrode are of digitally scaled widths and are individually energized to activate digitally scaled regions of the transistor. These regions are operated in a saturated class "A" mode in all power settings to achieve the desired stable phase transfer response and high power added efficiency.

Claims5

Dependent claims

In a transistor amplifier for radio frequency signals in which power added efficiency is substantially maintained as the power level is reduced, the combination comprising:

A. a segmented dual gate field effect transistor (SDGFET) for r.f. signal amplification comprising:
(i) a source electrode at signal ground,
(ii) a first, signal gate electrode, adjacent to the source electrode to which input signals are applied, referenced to signal ground,
(iii) a drain electrode, at which amplified output signals appear, referenced to signal ground,
(iv) a second, conduction control gate electrode, adjacent to the drain electrode, formed of an m-fold plurality of segments of scaled widths (e.g. 1, 2, 4, units) selected to achieve a greater than m fold plurality of effective segmental widths (e.g. 1, 2, 3, 4, 5, 6, 7 units) when selectively activated,
(v) each segment having a separate terminal for activating a portion of the FET coextensive with said segment when a first potential is applied, and for inactivating said portion when a second potential is applied,
said source, first gate, segmented second gate, and drain electrodes being of a width determined by the desired power level and coextensive;
each SDGFET portion having a first saturated class A state at a desired power level, and a second zero current zero power state, as a function of the potentials applied to said electrodes;
B. a FET driver stage to which an input r.f. signal is applied, and from which an amplified r.f. signal is obtained and coupled to the first gate electrode of said SDGFET, said FET driver stage supplying said r.f. signal at an amplitude which substantially saturates said SDGFET transistor in a minimum power level, at which the SDGFET transistor gain is minimum, thus insuring saturated operation and thereby accurately scaled power levels and a uniform phase transfer response at all power levels of said SDGFET transistor;
and
C. energization and power control means for said SDGFET comprising:
(i) means to apply a dc bias between source and drain electrodes for efficient signal amplification,
(ii) means to bias said first gate electrode for signal amplification at a saturated power setting, and
(iii) means for selectively applying one of said two potentials to each of said m fold segment terminals to set a desired power level for the output signal appearing at said drain electrode, the application of said second potential to successive segment decrementing the signal power from the maximum power level with a minimum reduction in power added efficiency and a minimum change in signal transfer phase.

11 more elements

In a transistor amplifier for radio frequency signals in which power added efficiency is substantially maintained as the power level is reduced, the combination comprising:

A. a segmented dual gate field effect transistor (SDGFET) for r.f. signal amplification comprising:
(i) a source electrode at signal ground,
(ii) a first, signal gate electrode, adjacent to the source electrode to which input signals are applied, referenced to signal ground,
(iii) a drain electrode, at which amplified output signals appear, referenced to signal ground,
(iv) a second, conduction control gate electrode, adjacent to the drain electrode, formed of an m-fold plurality of segments of scaled widths (e.g. 1, 2, 4, units) selected to achieve a greater than m fold plurality of effective segmental widths (e.g. 1, 2, 3, 4, 5, 6, 7 units) when selectively activated,
(v) each segment having a separate terminal for activating a portion of the FET coextensive with said segment when a first potential is applied, and for inactivating said portion when a second potential is applied,
said source, first gate, segmented second gate, and drain electrodes being of a width determined by the desired power level and coextensive;
each SDGFET portion having a first saturated class A state at a desired power level, a second zero current zero power state, and a third high conduction low-power state, as a function of the potentials applied to said electrodes;
B. signal input terminals;
C. a FET driver stage coupled to said signal input terminals from which an amplified r.f. signal is obtained and coupled to the first gate electrode of said SDGFET, said FET driver stage supplying said r.f. signal at an amplitude which substantially saturates said SDGFET transistor in a minimum power level, at which the SDGFET transistor gain is minimum, thus insuring saturated operation and thereby accurately scaled power levels and a uniform phase transfer response at all power levels of said SDGFET transistor;
D. signal output terminals coupled to an of said SDGFET;
E. means for facilitating activation/inactivation of said amplifier, when connected in parallel with other like amplifiers, comprising:
a FET shunt switch, having the source electrode connected to signal ground, the drain electrode connected to one of said signal input terminals to provide zero dc source to drain potential, and a gate electrode;
said FET shunt switch having a zero current zero power state, and a high conduction low power state as a function of the potentials applied to said electrodes;
F. energization and power control means for said SDGFET and said FET shunt switch comprising:
(i) means for selectively applying a dc bias between source and drain electrodes of said SDGFET for efficient signal amplification, the application of said dc bias to said drain activating said transistor amplifier and removal of said dc bias facilitating inactivation,
(ii) means to bias said first gate electrode of said SDGFET for signal amplification at a saturated power setting, and
(iii) means for selectively applying one of said two potentials to each of said m fold segment terminals to set a desired power level for the output signal appearing at said SDGFET drain electrode, the application of said second potential to successive segments decrementing the signal power from the maximum power level with a minimum change in signal transfer phase;
and
(iv) means coupled to the gate electrode of said shunt switch to selectively apply a conduction inhibiting potential to said gate electrode to activate said transistor amplifier, and to remove said inhibiting potential and allow zero drain conduction to inactivate said transistor amplifier;
the removal of said dc bias from the drain electrode of said SDGFET and the application of said first potential to each of said segments causing said SDGFET to assume said third state, creating a low impedance shunt at the amplifier signal output terminals for inactivating said transistor amplifier.

18 more elements

Variable power amplification means for radio frequency signals in which power added efficiency is substantially maintained as the power level is reduced comprising:

A. an input terminal to which an r.f. signal is supplied;
B. at least two amplifiers of differing power levels, each amplifier having
(1) a first transmission line of a quarter wave electrical length at the operating frequency having one end connected to said r.f. input terminal;
(2) a FET shunt switch, having the source electrode connected to signal ground, the drain electrode to the other end of said transmission line to provide zero dc source to drain potential, and the gate electrode connected to a control terminal;
(3) a SDGFET for r.f. signal amplification, comprising:
(i) a first, signal gate electrode, connected to said other end of said transmission line,
(ii) a source electrode at signal ground,
(iii) a drain electrode, at which output r.f. signals appear,
(iv) a second, segmented, conduction control gate electrode, adjacent to the drain electrode,
(v) a separate terminal associated with each segment for applying a first activating or a second inactivating potential to the segment to activate or inactivate an associated portion of the SDGFET coextensive with said segment;
each SDGFET portion having a first saturated class A state at a desired power level, a second zero current zero power state, and a third high conduction low-power state, said shunt switch having a zero current zero power state, and a high conduction low power state as a function of the potentials applied to said electrodes;
(4) a second transmission line of a quarter wave electrical length at the operating frequency having one end connected to the drain electrode of said SDGFET;
C. an output terminal coupled to the other end of said second transmission line for deriving from said two amplifers r.f. signals at predetermined power levels;
and
D. energization and power control means comprising:
(i) means coupled to said control terminals for biasing the FET shunt switch of one of said amplifiers off, to facilitate activation of said one amplifier, and the other FET shunt switch on to facilitate inactivation of said other amplifier,
(ii) means to apply an operating bias between source and drain electrodes of the SDGFET transistor in said one active amplifier, and to remove the operating bias between source and drain electrodes of the other SDGFET transistor for facilitating said third state operation in the SDGFET of the inactive amplifier, and
(iii) means for selectively applying one of said two potentials to each of the segment terminals of the operating SDGFET transistor in said one active amplifier, to set a desired power level for the output signal appearing at said drain electrode, the application of said second potential to successive segments decrementing the signal power from the maximum power level with a minimum reduction in power added efficiency and a minimum change in signal transfer phase, the segments in the SDGFET in said inactive amplifier having said first potential applied thereto for operation in said third state.

15 more elements

Dependencies are inferred from the claim text.