Target of image pickup tube having an amorphous semiconductor laminate

A target of an image pickup tube comprising a light-transmitting substrate providing a light-receiving side of said target, a transparent conductive layer of a metal oxide or of an evaporated metal adjacent to the substrate;

• a hole-blocking layer comprised of a-Si:H doped with phosphorus, an amorphous silicon nitride, or silicon oxide adjacent to the transparent conductive layer;
• a photoconductive layer for converting incident light into photo carriers and consisting essentially of amorphous silicon or a-Si:H arranged adjacent to the hole-blocking layer;
• a layer of an amorphous chalcogenide consisting essentially of selenium adjacent to the photoconductive layer;
• and a layer for ensuring smooth landing of an electron beam arranged adjacent to the layer of amorphous chalcogenide.

A target of an image pickup tube comprising:

• a light-transmitting substrate;
• a transparent conductive layer on said substrate;
• a photoconductive layer having a first amorphous layer for converting incident light into photo carriers and consisting essentially of silicon, and a second amorphous layer consisting essentially of selenium, wherein said first amorphous layer is disposed on a light receiving side of said photoconductive layer;
• and
• a blocking layer for preventing injection of carriers from said transparent conductive layer into said photoconductive layer.