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AssigneeHitachi, Ltd.
InventorsTakahiko Takahashi, Funikazu Itoh, Akira Shimase, HIroshi Yamaguchi, Mikio Hongo, Satoshi Haraichi
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The present invention relates to a semiconductor integrated circuit device and a process for producing the same. A hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a predetermined region on the insulating film are irradiated with either a laser beam or an ion beam in a metal compound gas to deposit metal in the hole and on said region and a connecting wiring is formed by means of optically pumped CVD. To electrically connect upper- and lower-level wirings in a multilayer wiring structure by a connecting wiring, the connecting wiring is electrically isolated from an intermediate-level wiring through which it extends. The above-described arrangement enables provision of a hole with a focused ion beam and formation of a metal wiring on a selective region by means, for example, optically pumped CVD. Accordingly, it is possible to effect fine machining and electrically connect together wirings inside an LSI after the completion thereof. It is therefore possible to carry out debugging, repair and a defect analysis of the LSI.
A process for producing a semiconductor integrated circuit device having a multilayer wiring structure in which a first insulating film is interposed between an upper-level wiring and a lower-level wiring and the surface of said upper-level wiring is protected by a second insulating film, said method comprising the steps of:
A process for producing a semiconductor integrated circuit device having a multilayer wiring structure in which a first insulating film is interposed between an upper-level wiring and a lower-level wiring and the surface of said upper-level wiring is protected by a second insulating film, said method comprising the steps of:
A process for producing a semiconductor integrated circuit device having a multilayer wiring structure in which a plurality of layers of wirings are isolated from each other by respective insulating films and a connecting wiring is connected to a lower-level wiring through a contact hole provided so as to extend through an upper-level wiring, said process comprising the steps of:
A process for producing a semiconductor integrated circuit device wherein holes are bored in an upper-level insulating film at a portion thereof where contact holes are to be provided by machining with an energy beam and then the insides of these holes and the region therebetween are irradiated with a laser or focused ion beam in an atmosphere containing a metal compound gas to deposit a metal on the irradiated regions, thereby forming a metal film between wirings and thus electrically connecting together these wirings, wherein the improvement comprises notching a portion of the upper-level wiring at which the metal is deposited to form a notch, the notch being formed so as to extend completely through the upper-level wiring at a location around the contact holes, thereby electrically isolating said portion from another portion of the upper-level wiring.
A process for producing a semiconductor integrated circuit device having a multilayer wiring structure in which a plurality of layers of wirings are isolated from each other by respective insulating films and a connecting wiring is connected to a lower-level wiring through a contact hole provided so as to extend through an upper-level wiring, said process comprising the steps of:
Dependencies are inferred from the claim text.