Process for the preparation of a multi-layer stacked junction typed thin film transistor using seperate remote plasma

A process for preparing a multi-layers stacked junction type thin film transistor having a base region of at least approximately 1000 .ANG. in thickness comprising a polycrystal silicon-containing film having grains of at least 1000 .ANG. in size, comprising forming said polycrystal silicon film by the steps of:

• (a) generating a precursor (A) by activating a gaseous raw material in a first activation space using activating energy, said gaseous raw material selected from the group consisting of compounds represented by the general formula:
• Si.sub.n X.sub.2n+2 and compounds represented by the general formula:
• (SiX.sub.2).sub.n, wherein n is an integer of 1 to 3 and X is F;
• (b) generating a precursor (B) using activating energy in a second activation space which is separate from said first activation space said precursor (B) being chemically reactive with said precursor (A) so as to cause the formation of a film, and formed by activating a gaseous hydrogen-containing raw material selected from the group consisting of H.sub.2 gas, compounds represented by the general formula:
• Si.sub.n H.sub.2n+2 and compounds represented by the general formula:
• SiH.sub.n X.sub.4-n, wherein n is an integer of 1 to 3 and X is F, Cl, Br or I, said precursor (B) including H.sub..alpha. * species having a luminescence intensity I[H.sub..alpha. *];
• (c) introducing said precursor (A) and said precursor (B) into a film forming space separate from said first and second activation spaces, said film forming space having a substrate maintained at a temperature of at least 150.degree. C. while regulating the amount said precursor (A) and the amount of said precursor (B) such that I[H.sub..alpha. *]/I[SiF*] is at least 6.times.10.sup.-3 in said film forming space wherein SiF* is a species formed by the reaction of said precursor (A) and said precursor (B) having a luminescence intensity of I[SiF*];
• and
• (d) chemically reacting said precursor (A) and said precursor (B) in space surrounding the surface of the substrate so as to thereby form said polycrystal silicon film.