Chemical vapor deposition reactor for producing metal carbide or nitride whiskers
AssigneeGTE Laboratories Incorporated
InventorsCharles D'Angelo, Joseph G. Baldoni, II, Sergej-Tomislav Buljan
Life of this patent
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Abstract
A reactor for producing single crystal metal carbide, nitride, or carbonitride whiskers, where the metal is one or more of Ti, Zr, Hf, Nb, Ta or W. The reactor walls and inner fixtures provide the substrate surfaces, greatly increasing the surface area available for whisker growth. Preferred substrate materials are nickel or high nickel alloy coated with TiC or TiN, or, for carbide or carbonitride whiskers, nickel impregnated graphite. An alternate embodiment provides a collecting chamber and vibrating means to mechanically detach whiskers, allowing for more efficient batch, or continuous operation.
Claims10
A reactor for producing metal carbide, nitrde, or carbonitride single crystal whiskers comprising:
- A. a reaction vessel having outer walls generally enclosing a reaction chamber, sealed from the ambient atmosphere and adapted to cooperate with heating means for heating of the reaction chamber to an operating temperature suitable for whisker growth;
- B. gas inlet means;
- and
- C. gas outlet means;
- and
- D. wherein at least one of the outer walls, inlet means, and outlet means provides surfaces facing the reaction chamber formed from one or more substrate materials suitable for providing catalyzing and supporting substrates for nucleation and growth of the whiskers, the substrate materials are selected from the group consisting of nickel, an alloy containing at least 50% by weight nickel, and graphite impregnated with about 0.1-1.0 mole % nickel, and the surface area of the substrate material surfaces comprises at least a major portion of the total surface area of surfaces defining the reaction chamber.
A reactor for producing metal carbide, nitride, or carbonitride single crystal whiskers comprising:
- A. a vessel sealed from the ambient atmosphere comprising an upper reaction chamber and a lower collecting chamber;
- B. the upper chamber having a top wall and side walls, and being adapted to cooperate with heating means for heating of the reaction chamber to an operating temperature suitable for whisker growth;
- C. the lower chamber having a bottom wall, and being disposed generally vertically below and open to the upper chamber and generally coaxial therewith, and being adapted to be maintained at a temperature sufficiently below the operating temperature to preclude significant whisker production therein;
- D. gas inlet means comprising an inlet port through the bottom wall;
- a plurality of inlet tubes each having at least one aperture therethrough, and disposed near the top wall and extending radially across the upper chamber from near the axis of the chamber to near the side walls;
- and a conduit extending along the axes of the chambers and operationally interconnecting the inlet port and the inlet tubes for gas flow from the inlet port through the inlet tube apertures into the upper chamber;
- E. outlet means to permit the flowing gas to exit the vessel below the upper chamber;
- and
- F. a plurality of rods extending radially from the axial conduit into the upper chamber;
- G. wherein at least the inner surfaces of the side walls of the upper chamber, and the outer surfaces of the inlet tubes, the axial conduit, and the rods are formed from one or more substrate materials selected from the group consisting of nickel coated with a titanium carbide or nitride layer about 20-30 microns thick, an alloy containing at least 50% by weight nickel and coated with a titanium carbide or nitride layer about 20-30 microns thick, and graphite impregnated with about 0.1-1.0 mole % nickel;
- and further comprising
- H. whisker detaching means arranged to periodically, during operation, vibrate at least the axial conduit to detach at least some of the whiskers from the substrate surfaces.
Dependencies are inferred from the claim text.