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US 4,900,372 AGranted
III-V on Si heterostructure using a thermal strain layer
AssigneeKopin Corporation
InventorsJhang W. Lee, Richard E. McCullough
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Abstract
A method for producing wafers having deposited layers of III-V materials on Si or Ge/Si substrates is disclosed. The method involves the use of multiple in situ and ex situ annealing steps and the formation of a thermal strain layer to produce wafers having a decreased incidence of defects and a balanced thermal strain. The wafers produced thereby are also disclosed.
Claims12
An article having multiple layers of III-V material produced by the process comprising:
- a. providing a substrate upon which III-V material layers are to be deposited;
- b. forming a III-V nucleation layer upon the substrate via organometallic chemical vapor deposition in a growth chamber;
- c. growing a first III-V film upon the nucleation layer in the growth chamber;
- d. annealing the first III-V film;
- e. growing a second III-V film upon the first III-V film;
- f. continuing the deposition of the second III-V film while simultaneously, repeatedly cycling the temperature between about 300.degree. and 750.degree. C.;
- and
- g. growing a third III-V film upon the second III-V film to form a layered substrate.
5 more elements
A wafer comprising:
- a. a substrate;
- b. a nucleation layer comprising a III-V material;
- c. a first buffer layer comprising a III-V material;
- d. a second buffer layer comprising a III-V material;
- e. a thermal strain layer comprising a III-V material;
- and
- f. a device layer.
4 more elements
Dependencies are inferred from the claim text.