Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether

A radiation resist having extremely high sensitivity to energetic radiation, which resist is self-developing and is resistant to dry etching, said energetic radiation including electron beam radiation, ion beam radiation, x-ray radiation, and gamma ray radiation, said resist being in the form of a substantially amorphous oxygen heteroatom linear chain polymer with haloalkyl substituents, said polymer being derived from (a) a cyclic ether, (b) a haloalkyl substituted cyclic ether, or (c) a cyclic ether with an aliphatic aldehyde, at least one of which includes a haloalkyl substituent, which polymer is adapted to depolymerize in the absence or presence of photo initiators, said polymer being of the formula ##STR5## wherein R.sub.1 is a haloalkyl substituent of the formula --CH.sub.2-a X.sub.a R', R' is X or an alkyl, haloalkyl, aryl or silyl substituent having 1 to 6 carbon atoms, X is chlorine or fluorine, a is 1 or 2, excluding F.sub.2 CH-- and FCH.sub.2 --;

• R.sub.2 is H, an alkyl substituent selected from the group consisting of aliphatic primary, secondary or tertiary alkyl groups comprising 1 to 7 carbon atoms, or halogenated derivatives thereof;
• p is 0 or a small integer, q is a small integer greater than 0, b is small integer not less than 2, and n is a large integer.