Process for forming insulating film used in thin film electroluminescent device
AssigneeHitachi Chemical Company, Ltd.
InventorsTakeshi Yoshida, Masahiko Itabashi
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Abstract
An insulating film formed by a plasma CVD method at the substrate temperature of 350.degree. to 550.degree. C.l is good in electric properties and heat resistance without causing whitening phenomenon is suitable for use in a thin-film electroluminescent device.
Claims12
A process for forming an insulating film which comprises vapor the depositing a thin film of at least one member selected from a group consisting of silicon nitride, silicon oxide and silicon oxynitride on a transparent electroconductive film formed on a transparent substrate by a plasma chemical vapor deposition method with heating the transparent substrate to a substrate temperature of 350 to 550.degree. C.;
- said transparent electroconductive film being formed of a material selected from the group consisting of IN.sub.2 O.sub.3 (Sn), SnO.sub.2 (Sb), Sn.sub.2 O(P), SnO.sub.2 (Te), SnO.sub.2 (W), SnO.sub.2 (Ce), SnO.sub.2 (F), Cd.sub.2 SnO.sub.4, Cd.sub.2 SnO.sub.2, CdO, Au, Ag, Cu, Pd, Pt, Ae, Cr, and Rh and said transparent substrate comprising a glass substrate.
A process for producing a thin-film electroluminescent device which comprises:
- forming a first insulating film of at least one member selected from the group consisting of silicon nitride, silicon oxide and silicon oxynitride on transparent electrodes formed on a transparent substrate by a plasma chemical vapor deposition method with heating the transparent substrate to a substrate temperature of 350 to 550.degree. C., said transparent electroconductive film being formed of a material selected from the group consisting of In.sub.2 O.sub.3 (Sn), SnO.sub.2 (Sb), Sn.sub.2 O(P), SnO.sub.2 (Te), SnO.sub.2 (W), SnO.sub.2 (Ce), SnO.sub.2 (F), Cd.sub.2 SnO.sub.4, Cd.sub.2 SnO.sub.2, CdO, Au, Ag, Cu, Pd, Pt, Ae, Cr, and Rh and said transparent substrate comprising a glass substrate,
- forming an emission layer on the first insulating layer,
- forming a second insulating layer on the emission layer;
- and
- forming backside electrodes thereon.
Dependencies are inferred from the claim text.