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US 4,890,245 AGranted
Method for measuring temperature of semiconductor substrate and apparatus therefor
AssigneeNikon Corporation
InventorsMasahiko Yomoto, Makoto Uehara, Hajime Ichikawa, Shigeru Kato
Life of this patent
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Abstract
An apparatus and a method for detecting the temperature of a substrate, and for controlling the radiation-annealing of the substrate, for example, measures the intensity of infrared light from the substrate when the substrate is irradiated by measuring infrared light and also when the substrate is not irradiated by the infrared light. The temperature is calculated from the transmissivity and emissivity of the substrate, which are calculated from the intensity measurements.
Claims23
An apparatus for detecting the temperature of a substrate, comprising:
- (a) support means for supporting said substrate;
- (b) irradiation means for irradiating said substrate, supported by said support means, with infrared light;
- (c) control means for controlling the irradiation of infrared light by said irradiation means onto said substrate;
- (d) intensity detection means positioned opposite to said irradiation means with respect to said substrate supported by said support means, and adapted to detect the intensity of infrared light from said substrate, thereby generating an output corresponding to the intensity of thus detected infrared light;
- and
- (e) temperature detection means for detecting the temperature of said substrate, on the basis of a first output of said intensity detection means when said substrate is irradiated by the infrared light from said irradiation means and a second output of said intensity detection means when said substrate is not irradiated by the infrared light from said irradiation means.
3 more elements
An apparatus for detecting the temperature of a substrate, comprising:
- (a) support means for supporting said substrate;
- (b) irradiation means for irradiating a predetermined area of said substrate, supported by said support means, with infrared light;
- (c) intensity detection means positioned opposite to said irradiation means with respect to said substrate supported by said support means, and adapted to detect the intensity of infrared light from said predetermined area and that of infrared light from an area of said substrate different from said predetermined area, thereby generating outputs corresponding to the detected intensities of infrared lights;
- and said predetermined area and that of infrared light from an area of said substrate different from said predetermined area, thereby generating outputs corresponding to the detected intensities of infrared light;
- and
- (d) temperature detection means for detecting the temperature of said substrate, on the basis of a first output of said intensity detection means corresponding to the infrared light from said predetermined area and a second output corresponding to the infrared light from said another area.
3 more elements
A method of detecting the temperature of a substrate, comprising steps of:
- (a) supporting said substrate;
- (b) applying, to said substrate, irradiation means for irradiating said supported substrate with infrared light and intensity detection means positioned opposite to said irradiation means with respect to said supported substrate and adapted to detect the intensity of infrared light from said substrate thereby generating an output corresponding to the detected intensity of the infrared light;
- and
- (c) detecting the temperature of said substrate, on the basis of an output of said intensity detection means when said substrate is irradiated by the infrared light from said irradiation means and an output of said intensity detection means when said substrate is not irradiated by the infrared light from said irradiation means.
1 more element
A method for detecting the temperature of a substrate, comprising steps of:
- (a) supporting a substrate;
- (b) applying, to said substrate, irradiation means for irradiating a predetermined area of said supported substrate with infrared light, and intensity detection means positioned opposite to said irradiation means with respect to said supported substrate and adapted to detect the intensity of infrared light from said substrate and to generate an output corresponding to the detected intensity of the infrared light;
- (c) guiding the infrared light from said predetermined area and the infrared light from an area of said substrate different from said predetermined area to said intensity detection means;
- and
- (d) detecting the temperature of said substrate, based on an output of said intensity detection means corresponding to the infrared light from said predetermined area, and an output corresponding to the infrared light from the area of said substrate different from said predetermined area.
2 more elements
An apparatus comprising;
- (a) support means for supporting a substrate;
- (b) annealing means for annealing the substrate supported by said support means;
- (c) irradiation means for irradiating the substrate, supported by said support means, with a radiation;
- (d) means for detecting the intensity of the radiation from said irradiation means transmitted by said substrate and generating a detection signal corresponding to the detected intensity;
- and
- (e) control means for controlling said annealing means in response to said detection signal.
3 more elements
An apparatus for detecting the temperature of a substrate, comprising;
- (a) support means for supporting a substrate;
- (b) irradiation means for irradiating said substrate, supported by said support means, with a radiation;
- (c) intensity detection means for detecting the intensity of the radiation coming from said irradiation means and transmitted by said substrate and generating an output corresponding to the detected intensity of the radiation;
- and
- (d) temperature detection means for detecting the temperature of said substrate, on the basis of the output of said intensity detection means.
2 more elements
An apparatus for detecting the temperature of a substrate, comprising;
- (a) support means for supporting said substrate;
- (b) irradiation means for irradiating a predetermined area of said substrate supported by said support means with infrared light;
- (c) intensity detection means positioned opposite to said irradiation means with respect to said substrate supported by said support means and adapted to detect the intensity of the infrared light from said predetermined area and the intensity of the infrared light from an area of said substrate different from said predetermined area and to generate outputs corresponding to the detected intensities of the infrared lights;
- and
- (d) temperature detection means for detecting the temperature of said substrate, on the basis of a first output of said intensity detection means corresponding to the infrared light from said predetermined area, and a second output corresponding to the infrared light from an area different from said predetermined area.
2 more elements
Dependencies are inferred from the claim text.