Non-volatile memory cell and sensing method
AssigneeRamtron Corporation
InventorKenneth J. Mobley
Life of this patent
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Abstract
A ferroelectric memory cell has one capacitor isolated from bit lines by two transistors, one on each side. The cell is read by pulsing the capacitor in one direction, then the other, storing developed charge on other capacitors or the like, and comparing voltages.
Claims17
A non-volatile memory cell arrangement comprising a ferroelectric capacitor having two plates, a first bit line, a first switching device coupling one plate of said ferroelectric capacitor to said first bit line, a second bit line, a second switching device coupling the other plate of said capacitor to said second bit line, a first temporary storage device coupled to said first bit line, and a second temporary storage device coupled to said second bit line.
A method to read data stored in a non-volatile memory cell which uses a ferroelectric capacitor comprising the steps of applying a first pulse to said capacitor and storing a first resulting signal, applying a second pulse to the capacitor to develop a second resulting signal, and combining said first and second resulting signals.
A method of reading data stored in a non-volatile memory cell which uses a ferroelectric capacitor for storage, comprising the steps of:
- applying a first pulse to said ferroelectric capacitor and developing a signal on a first storage capacitor selectively coupled to said ferroelectric capacitor, while isolating said ferroelectric capacitor from a second storage capacitor;
- then
- applying a second pulse to said ferroelectric capacitor and developing a signal on a second storage capacitor selectively coupled to said ferroelectric capacitor while isolating said ferroelectric capacitor from said first storage capacitor;
- and
- combining signals from said first and second storage capacitors to determine the original polarization state of the ferroelectric capacitor.
Dependencies are inferred from the claim text.