Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
AssigneeAmerican Telephone and Telegraph Company, AT&T Bell Laboratories
InventorsWilbur D. Johnston, Jr., Robert F. Karlicek, Jr., Judith A. Long, Daniel P. Wilt
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Abstract
High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
Claims12
A semiconductor device comprising
- a semiconductor body,
- means for applying current to said body, and
- means for preventing substantial current flow through a region of said body, characterized in that
- said preventing means comprises an In-based compound Group III-V epitaxial layer included in said region and having the physical characteristics of an Fe-doped InP-based MOCVD layer.
A semiconductor device comprising
- a semiconductor body, p1 means for applying current to said body, and
- means for preventing substantial current flow through a region of said body, characterized in that
- said preventing means comprises a high resistivity Fe-doped In-based compound Group III-V epitaxial layer included in said region.
A semiconductor device comprising
- an active region,
- electrode means for applying current to said device, and
- means for constraining said current to flow in a channel through said active region, characterized in that
- said constraining means comprises an In-based compound Group III-V epitaxial layer having an opening through which said channel extends and having the physical characteristics of an Fe-doped InP-based MOCVD layer.
A semiconductor device comprising
- an active region,
- electrode means for applying current to said device, and
- means for constraining said current to flow in a channel through said active region, characterized in that
- said constraining means comprises a high resistivity Fe-doped In-based compound Group III-V epitaxial layer having an opening through which said channel extends.
Dependencies are inferred from the claim text.