Semiconductor device with crystalline silicon-germanium-carbon alloy
AssigneeHitachi, Ltd.
InventorsSeijiro Furukawa, Hiroyuki Etoh, Akitoshi Ishizaka, Toshikazu Shimada
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Abstract
The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction therebetween. In such a device, no lattice mismatch occurs between the layers or even if lattice mismatch occurs, it is only slight, so that the silicon-germanium-carbon alloy layer is in no danger of causing misfit dislocation therein.
Claims28
A semiconductor device comprising:
- a first crystalline semiconductor layer being made mainly of silicon;
- and
- a second single crystalline semiconductor layer made of silicon-germanium-carbon semiconductor material, wherein the first and the second semiconductor layers form a heterojunction therebetween, and wherein the atomic number ration of germanium/cabron in the second semiconductor layer is in the range of 6.7/1 to 12/1.
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of semiconductor layers stacked on the semiconductor substrate, having a first semiconductor layer which is made mainly of crystalline silicon and a second semiconductor layer formed on the first semiconductor layer, being made of single crystalline silicon-germanium-carbon having an atomic number ratio of germanium/carbon in the range of 6.7/1 to 12/1;
- a pair of first electrodes for making current flow in the plurality of semiconductor layers;
- and
- a second electrode for injecting signal current into the plurality of semiconductor layers so as to control the current flow.
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of semiconductor layers stacked on the semiconductor substrate, having a first crystalline semiconductor layer made mainly of silicon and a second single crystalline semicondcutor layer made of a silicon-germanium-carbon alloy formed on said first crystalline semiconductor layer wherein an atomic number ratio of germanium/carbon in the second single crystalline semiconductor layer is in the range of 6.71 to 12/1;
- a pair of first electrodes for making a current flow in the plurality of semiconductor layers;
- and
- a second electrode for controlling current flow between said pair of first electrodes.
A semiconductor device comprising:
- a first semiconductor layer being made of crystalline silicon;
- a second semiconductor layer being made of single crystalline silicon-germanium-carbon alloy having an atomic number ratio of germanium/carbon in the range of 6.7/1 to 12/1, formed the first semiconductor layer, wherein incident light is converted into carriers;
- and
- a pair of electrodes for extracting current caused by the carriers.
Dependencies are inferred from the claim text.