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US 4,883,770 AGranted
Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication
AssigneeHewlett-Packard Company
InventorsGottfried H. Dohler, Ghulam Hasnain, Jeffrey N. Miller
Life of this patent
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Abstract
A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process is capable of producing NIPI superlattices that have selective contacts that are far superior to those which can be produced at present. This technique can also produce a wide variety of NIPI devices as well as other types of IC structures.
Claims11
A semiconductor fabrication process comprising the steps of:
- (a) exposing a substrate by a plurality of molecular beams to produce a epitaxially grown layer on the substrate, said beams being directed along a plurality of directions;
- and
- (b) blocking at least one beam with a mask having therein at least one aperture that enables a first of said beams to expose the substrate only in a first region and a second region and that enables a second of said beams to expose the substrate only in the second region and in a third region, said three regions being nonoverlapping and said second region being contiguous to the first and third regions, said beams being selected to form a first type of selective contact from the first region to the second region and form a second type of selective contact form the third region to the second region.
Dependencies are inferred from the claim text.