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US 4,879,250 AGranted
Method of making a monolithic interleaved LED/PIN photodetector array
AssigneeThe Boeing Company
InventorEric Y. Chan
Life of this patent
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Abstract
Interleaved arrays of photoelectronic devices are fabricated utilizing one-step epitaxial growth of all active layers and simple planar processing. Exemplary arrays include interleaved LED transmitters and PIN photodiode receivers that operate at the same wavelength on light that enters the PINs and exits the LEDs along opposite but parallel paths and interleaved arrays of LED transmitters that emit light at two different wavelengths.
Claims9
A process for fabricating an integrated optical device, comprising the steps of:
- in a single epitaxial growth operation and in succession on a substrate, growing an intrinsic layer, a first confining layer, an active light emitting layer, a second confining layer, and a cap layer;
- depositing an insulating layer on said cap layer;
- opening a plurality of first holes through said insulating layer to said cap layer;
- diffusing a conductivity effecting material through said first holes into said intrinsic layer;
- opening a plurality of second holes through said insulating layer to said cap layer;
- forming first and second metal p-contacts on said insulating layer, one of said first metal p-contacts being formed through each of said first holes, one of said second metal p-contacts being formed through each of said second holes;
- forming metal n-contacts on a side of said substrate that lies opposite said insulating layer, said metal n-contacts being arranged to leave portions of said substrate exposed, one of said exposed portions lying opposite each of said first and second metal p-contacts;
- etching an isolation groove between each of said first and second metal p-contacts, said grooves extending into said intrinsic layer;
- and
- etching windows through said substrate and said intrinsic layer to said first confining layer, one of said windows being etched opposite each of said second metal p-contacts.
7 more elements
A process for fabricating an integrated optical device, comprising the steps of:
- in a single epitaxial growth operation and in succession on a substrate, growing a first confining layer, a first light emitting layer, a second confining layer, a second light emitting layer, a third confining layer, and a cap layer;
- depositing an insulating layer on said cap layer;
- opening a plurality of first holes through said insulating layer;
- diffusing a conductivity effecting material through said first holes into said first light emitting layer;
- opening a plurality of second holes through said insulating layer to said cap layer;
- forming first and second metal p-contacts on said cap layer, one of said first metal p-contacts being formed through each of said first holes, one of said second p-metal contacts being formed through each of said second holes;
- forming metal n-contacts on a side of said substrate that lies opposite said insulating layer, said metal n-contacts being arranged to leave portions of said substrate exposed, one of said exposed portions lying opposite each of said first and metal p-contacts;
- and
- etching an isolation groove between each of said first and second metal p-contacts, said grooves extending into said first confining layer.
6 more elements
Dependencies are inferred from the claim text.