Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma
AssigneeTexas Instruments Incorporated
InventorsRudy L. York, Joseph D. Luttmer, Patricia B. Smith, Cecil J. Davis
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Abstract
A processing apparatus and method for depositing a passivating layer on a mercury-cadmium-telluride wafer utilizing a single process chamber to provide oxygen gas to the chamber with the excitation energy being provided by a remotely generated plasma in order to remove any organic residue and then supplying either a sulfide or selenide gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce a passivating layer.
Claims10
A method for sequential cleaning and passivating a mercury-cadmium-telluride wafer with sulfide in a single process chamber, comprising:
- (a) disposing said wafer in a process chamber within a process module at low pressure;
- (b) generating a remote plasma from oxygen gas;
- and
- (c) introducing the remote plasma within said chamber and to the face of the wafer for an appropriate time period;
- (d) introducing a sulfide gas into the chamber and to the face of the wafer for an appropriate time period;
- and
- (e) illuminating said sulfide gas within said chamber with additional Ultraviolet light produced within said module.
A method for passivating a mercury-cadmium-telluride wafer with selenide comprising:
- (a) disposing a wafer in a process chamber within a process module at low pressure;
- (b) generating a remote plasma from oxygen gas;
- (c) introducing the remote plasma into said chamber and to the face of the wafer for an appropriate time period;
- (d) introducing a selenide gas within the chamber and to the face of the wafer for an appropriate time period;
- and
- (e) illuminating said selenide gas within said chamber with additional Ultraviolet light produced within said module.
A method for sequential cleaning and passivating a mercury-cadmium-telluride film with sulfide in a single processing chamber, comprising the steps of:
- (a) generating free radicals from an oxygen containing gas in a plasma generator remote from the processing chamber;
- and
- (b) introducing the free radicals to said chamber and to the face of the wafer for an appropriate time period;
- and
- (c) introducing a sulfur containing gas to the chamber and to the face of the wafer for an appropriate time period.
Dependencies are inferred from the claim text.