Preparation of high purity compounds of sulfur, selenium, and tellurium

A method for preparing arsenic triselenide of high purity, comprising the steps of:

• (a) reacting arsenic and selenium in a closed glass container to form arsenic triselenide, which container has been degassed prior to said step of reacting;
• (b) purifying the arsenic triselenide by vaporizing it and contacting the vaporized arsenic triselenide with a reducing agent selected from the group consisting of carbon and carbon monoxide to remove oxide impurities in the arsenic triselenide;
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• (c) condensing the purified arsenic triselenide.

A method for preparing arsenic triselenide of high purity, comprising the steps of:

• (a) furnishing a degassed, sealed vitreous silica boat in a vitreous silica reactor, the boat being charged with sufficient arsenic and selenium to react to form As.sub.2 Se.sub.3 ;
• (b) heating the boat with the charge therein to a temperature of greater than the melting point of arsenic triselenide for a period of time sufficient to form As.sub.2 Se.sub.3, and then cooling the boat to form the solid;
• (c) purifying the arsenic triselenide with carbon to remove the oxide therefrom, by furnishing a three-chamber vitreous silica reactor having a center chamber, a left chamber communicating with the center chamber through a constricted left passage, and a right chamber communicating with the center chamber through a constricted right passage, the reactor having arsenic triselenide in the left chamber and carbon chips in the center chamber, and further having a quartz-wool separator between the carbon chips and the left chamber to prevent movement of carbon chips into the left chamber, and a quartz-wool separator between the carbon chips and the right chamber to prevent movement of carbon chips into the right chamber;
• (d) applying a vacuum to the reactor through a vacuum port in the right chamber;
• (e) heating the center chamber to outgas the carbon chips;
• (f) heating the left chamber to a temperature greater than the melting point of arsenic triselenide but less than the temperature of center chamber, while maintaining the center chamber at a temperature greater than the temperature to which the left chamber is heated, thereby causing the arsenic triselenide to vaporize, travel through the center chamber to react the oxide impurities therein with the carbon chips, and condense as purified arsenic triselenide in the right chamber;
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• (g) sealing the right chamber with the purified arsenic triselenide therein.

A method of preparing arsenic triselenide of high purity comprising the steps of:

• (a) forming arsenic triselenide from arsenic and selenium;
• and
• (b) purifying the compound by furnishing a three-chamber vitreous silica reactor having a center chamber, a left chamber communicating with the center chamber through a constricted left passage, and a right chamber communicating with the center chamber through a constricted right passage, the reactor having the compound to be purified in the left chamber and carbon chips in the center chamber, and further having a quartz-wool separator between the carbon chips and the left chamber to prevent movement of carbon chips in the left chamber, and a quartz-wool separator between the carbon chips and the right chamber to prevent movement of carbon chips into the right chamber:
• (c) applying a vacuum to the reactor through a vacuum port in the right chamber;
• (d) heating the center chamber to outgas the carbon chips;
• (e) heating the left chamber to a temperature of about 500.degree. C. while maintaining the center chamber at a temperature of 900.degree. C., thereby causing the compound to vaporize, and travel through the center chamber to react the oxide impurities therein with the carbon chips, and condense as the purified compound in the right chamber;
• and
• (f) sealing the right chamber with the purified compound therein.