Semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsToshiya Yokogawa, Mototsugu Ogura
Life of this patent
Estimating the term…
Abstract
A semiconductor device in which a strained-layer of super-lattice composed of two or more group II-IV semiconductors grown on an epitaxial growth layer formed on a surface of a semiconductor substrate. Since the strained-layer of super-lattice composed of two or more group II-VI semiconductors is present in the heterojunction of the heterostructure, it is possible to form a favorable heterostructure seminconductor layer, inhibiting the adverse effects of lattice mismatch.
Claims13
A semiconductor device which is a second harmonic generator comprising a strained layer superlattice which is composed of a multilayer structure made of first and second Group II-VI semiconductors, said first and second Group II-VI semiconductors having first and second lattice constants respectively and formed on a semiconductor substrate, wherein when a first optical wave is incident on said strained layer for propagation in said strained layer, a second harmonic wave of a wavelength shorter than said first optical wave is generated by a nonlinear optical effect therein.
Dependencies are inferred from the claim text.