Micro-electronics devices and methods of manufacturing same
AssigneeDigital Equipment Corporation
InventorDavid Kellerman
Life of this patent
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Abstract
A low dielectric constant material for use in the formation of thick film circuits such as VLSI devices. The material comprises a thick film insulation matrix of standard viscosity; a thick film organic vehicle; and a plurality of dry, hollow, glass microspheres. The insulation matrix, vehicle, and microspheres are thoroughly combined into a homogeneous material of standard viscosity.
Claims7
A method of forming a low dielectric constant insulation layer according to thick film procedures comprising the steps of:
- (a) combining a thick film insulation matrix material comprising ceramic or glass ceramic composite, a thick film organic vehicle, and a plurality of hollow glass microspheres having a maximum size not exceeding about 400 mesh (U.S. Standard Sieve Series) into a homogeneous material;
- (b) depositing the material from step (a) onto the circuit portion to a desired thickness for the insulation layer;
- and
- (c) drying and firing the deposited material from step (b) to provide a material having a dielectric constant less than about 4.5 said firing causing the conductive particles of the metallization pattern to be sintered and fired into a continuous conductor in the shape of the desired pattern, said firing also evaporating any residual carrier and fusing the said material around the hollow glass microspheres to form a rigid structure with the hollow glass microspheres embedded therein.
A method of producing a low dielectric constant insulation layer according to thick film procedures comprising the steps of:
- (a) combining a thick film insulation matrix material comprising ceramic or glass ceramic composite, a thick film organic vehicle, and a plurality of hollow glass microspheres having a maximum size not exceeding about 400 mesh (U.S. Standard Sieve Series);
- (b) depositing the material from step (a) onto the metal pattern to a desired thickness;
- (c) drying and firing the low dielectric constant material deposited in step (b) to provide a material having a dielectric constant less than about 4.5 said firing causing the conductive particles of the metallization pattern to be sintered and fired into a continuous conductor in the shape of the desired pattern, said firing also evaporating any residual carrier and fusing the said material around the hollow glass microspheres to form a rigid structure with the hollow glass microspheres embedded therein;
- (d) repeating steps (b) and (c) until the final desired thickness of the insulation layer is approached;
- (e) depositing a conventional thick film dielectric insulating material onto the structure resulting from step (d) to a desired thickness to planarize the resulting structure;
- and,
- (f) drying and firing the material from step (e).
A method of producing a thick film device according to thick film procedures comprising the steps of:
- (a) providing a rigid dielectric substrate;
- (b) depositing a predetermined metal pattern on said substrate;
- (c) providing a low dielectric constant material which comprises a substantially homogeneous blend of a thick film insulation matrix material comprising ceramic or glass ceramic composite, a thick film organic vehicle and a plurality of hollow glass microspheres having a maximum size not exceeding about 400 mesh (U.S. Standard Sieve Series);
- (d) depositing the material from step (c) onto the deposited metal pattern;
- (e) drying and firing the material deposited in step (d) to provide a material having a dielectric constant less than about 4.5 said firing causing the conductive particles of the metallization pattern to be sintered and fired into a continuous conductor in the shape of the desired pattern, said firing also evaporating any residual carrier and fusing the said material around the hollow glass microspheres to form a rigid structure with the hollow glass microspheres embedded therein;
- and
- (f) repeating steps (b) to (e) until the desired number of metal patterns separated by layers of low dielectric material are completed.
Dependencies are inferred from the claim text.