Method of growing group III-V compound semiconductor epitaxial layer

A method of growing a group III-V compound semiconductor epitaxial layer on a substrate by use of atomic layer epitaxy, said method comprising the steps of:

• growing an aluminum layer on one of the {110} planes of the substrate by supplying a quantity of aluminum amounting to at least three times the surface density of aluminum in a molecular layer of said group III-V compound semiconductor epitaxial layer, wherein the obtained aluminum layer contains a quantity of aluminum essentially equal to at least the total quantity of aluminum in three molecular layers of said group III-V compound semiconductor epitaxial layer;
• and
• growing a layer of a group V material on the aluminum layer by supplying a quantity of the group V material amounting to at least three times the surface density of said group V material in a molecular layer of said group III-V compound semiconductor epitaxial layer, said layer of the group V material and said aluminum layer constituting said group III-V compound semiconductor epitaxial layer.

A method of growing a group III-V compound semiconductor epitaxial layer on a substrate by use of atomic layer epitaxy, said method comprising the steps of:

• growing a layer of a group V material on one of the {100}, (111)B, (111)B, (111)B and (111)B planes of the substrate by supplying a quantity of the group V material amounting to at least two times the surface density of said group V material in a molecular layer of said group III-V compound semiconductor epitaxial layer;
• and
• growing an aluminum layer on the layer of the group V material after said step of growing the group V material by supplying a quantity of aluminum amounting to at least two times the surface density of aluminum in a molecular layer of said group III-V compound semiconductor epitaxial layer, said aluminum layer and said layer of the group V material constituting said group III-V compound semiconductor epitaxial layer, wherein said group III-V compound semiconductor epitaxial layer has two molecular layers, and said aluminum layer contains a quantity of aluminum at least equal to but not substantially larger than the total quantity of aluminum in two molecular layers of said group III-V compound semiconductor epitaxial layer.

A method of growing a group III-V compound semiconductor epitaxial layer on a substrate by use of atomic layer epitaxy, said method comprising the steps of:

• growing an aluminum layer on one of the {110} planes of the substrate by supplying a quantity of aluminum amounting to at least three times the surface density of aluminum in a molecular layer of said group III-V compound semiconductor epitaxial layer, whereby the obtained aluminum layer contains a quantity of aluminum essentially equal to at least the total quantity of aluminum in three molecular layers of said group III-V compound semiconductor epitaxial layer;
• and
• growing a layer of a group V material on the aluminum layer after said step of growing the aluminum layer by supplying a quantity of the group V material amounting to at least three times the surface density of said group V material in a molecular layer of said group III-V compound semiconductor epitaxial layer, said layer of the group V material and said aluminum layer constituting said group III-V compound semiconductor epitaxial layer, wherein said group III-V compound semiconductor epitaxial layer has three molecular layers.

A method of growing a group III-V compound semiconductor epitaxial layer on a substrate by use of atomic layer epitaxy, said method comprising the steps of:

• growing a layer of a group V material on one of the {100} planes of the substrate by supplying a quantity of the group V material amounting to at least three times the surface density of said group V material in a molecular layer of said group III-V compound semiconductor epitaxial layer;
• and
• growing an aluminum layer on the layer of the group V material after said step of growing the layer of the group V material by supplying a quantity of aluminum amounting to at least three times the surface density of aluminum in a molecular layer of said group III-V compound semiconductor epitaxial layer, said aluminum layer and said layer of the group V material constituting said group III-V compound semiconductor epitaxial layer, wherein said group III-V compound semiconductor epitaxial layer has three molecular layers, and said aluminum layer contains a quantity of aluminum essentially equal to at least the total quantity of aluminum in three molecular layers of said group III-V compound semiconductor epitaxial layer.