Emissivity calibration apparatus and method
AssigneeProcessing Technologies, LLC
InventorsMichel Pecot, Jaim Nulman
Life of this patent
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Abstract
An improved method and apparatus are disclosed for calibrating the emissivity characteristics of a semiconductor wafer within a processing chamber by supporting a sample wafer on a graphite susceptor within the chamber and by comparing the temperature measured within the susceptor in close proximity to the center of the wafer with the temperature measured by the emission of radiation from the surface of the wafer through the walls of the processing chamber. Temperature measurements subsequently made from the radiation emitted from the surface of similar wafers are corrected with reference to the measurement made of the temperature within the susceptor on the sample wafer.
Claims7
Temperature sensing apparatus for operation within a processing chamber, the apparatus comprising:
- susceptor means having a substantially planar surface for receiving thereon a component to be positioned with the susceptor means within the processing chamber;
- a passage within the susceptor means extending to a location adjacent the substantially central location on the surface;
- sensing means disposed within said passage at said location for producing an output representative of the temperature at said location within the passage;
- support means disposed to support the susceptor means thereon for insertion into the processing chamber;
- and
- means in fluid communication with said surface for connection to a source of vacuum to retain a component on the surface of the susceptor means in response to pressure differential across such component.
Dependencies are inferred from the claim text.