Thin film transistor
AssigneeHosiden Electronics Co., Ltd.
InventorsYasuhiro Ukai, Shigeo Aoki
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Abstract
In a thin film transistor which has an active layer formed between source and drain electrodes, a gate insulating film formed in contact with the active layer, and a gate electrode formed in contact with the gate insulating film, the photoconductivity of the active layer is reduced by forming the active layer of amorphous silicon carbide (a-Si.sub.1-x C.sub.x) whose carbon content x is greater than 0.1.
Claims19
A thin film transistor which has an active layer formed between source and drain electrodes, a gate insulating film formed in contact with the active layer, and a gate electrode formed in contact with the gate insulating film, the improvement wherein said active layer is formed of amorphous silicon carbide (a-Si.sub.1-x C.sub.x) and the carbon content x of said amorphous silicon carbide is greater than 0.1 to reduce the photoconductivity of said active layer.
Dependencies are inferred from the claim text.