HcCdTe epitaxially grown on crystalline support

Abstract

A layer of HgCdTe (15) epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrated (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the finished HgCdTe layer (15).

Dependencies are inferred from the claim text.