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US 4,845,385 AGranted
BiCMOS logic circuits with reduced crowbar current
AssigneeSilicon Connections Corporation
InventorRobert N. Ruth, Jr.
Life of this patent
Estimating the term…
Abstract
A pair of bipolar transistors are connected in totem-pole fashion to provide an emitter-collector output connection. A pair of complementary MOS field-effect transistors are connected in push-pull fashion for each receiving a common input signal on a gate thereof and for driving a base of a corresponding one of the bipolar transistors. Resistors are connected to the field-effect transistors for isolating the output connection and substantially eliminating crowbar current.
Claims15
A BiCMOS integrated logic circuit, comprising:
- a pair of bipolar transistors connected in totem-pole fashion to provide an emitter-collector output connection;
- a pair of complementary MOS field-effect transistors connected in push-pull fashion for each receiving a common input signal on a gate thereof and for driving a base of a corresponding one of the bipolar transistors;
- and
- resistor means connected to the field-effect transistors for isolating the output connection and substantially eliminating crowbar current.
1 more element
A BiCMOS integrated circuit, comprising:
- a p-channel MOSFET;
- an n-channel MOSFET;
- a gate of the p-channel MOSFET being connected to a gate of the n-channel MOSFET;
- a first resistor connecting a drain of the p-channel MOSFET to a drain of the n-channel MOSFET;
- a second resistor connecting a source of the n-channel MOSFET to a ground;
- a first NPN bipolar transistor having a base connected to the drain of the p-channel MOSFET and a collector connected to a drain of the p-channel MOSFET;
- a second NPN bipolar transistor having a base connected to the source of the n-channel MOSFET, a collector connected to an emitter of the first NPN bipolar transistor, and an emitter connected to the ground;
- a third resistor connecting the drain of the n-channel MOSFET to the emitter of the first NPN bipolar transistor and the collector of the second NPN bipolar transistor;
- and
- a resistance value of the third resistor being sufficiently large relative to a resistance value of the first resistor to allow the first NPN bipolar transistor to turn ON rapidly while also allowing the n-channel MOSFET to discharge a signal at the base of the first NPN bipolar transistor before the second NPN bipolar transistor turns ON to thereby substantially reduce crowbar current.
7 more elements
Dependencies are inferred from the claim text.