US 4,839,734 AGranted

Solid-state imaging device having high-speed shutter function

AssigneeKabushiki Kaisha Toshiba

InventorYasuo Takemura

Life of this patent

Estimating the term…

Loading patent…

Abstract

Storage charges held in a photosensitive section of a CCD, serving as a solid-state imaging device, are simultaneously transferred to a high-speed transfer section, in response to a field shift pulse from a driver. The high-speed transfer section then transfers the charges to a field memory, in unit of lines and at a high speed. The field memory includes first and second memory arrays each having a one-field memory capacity and corresponding to a high-speed transfer array in the high-speed transfer section. Charges from each high-speed transfer array are alternately transferred to the first and second field memory arrays by a gate controlled by gate pulses supplied from the driver. The charges stored in the first field memory array are read out and transferred by a line transfer section, in units of lines, thereby obtaining a video signal of an odd-numbered field. Thereafter, the charges stored in the second field memory array are read out and transferred by the line transfer section, in units of lines, thereby obtaining a video signal of an even-numbered field.

Claims12

Dependent claims

A solid-state imaging device having a highspeed shutter function, comprising:

a photosensitive section for storing charges corresponding to an amount of received light and a period of time during which the light is received;
a vertical transfer section to which the storage charges in said photosensitive section are simultaneously transferred in response to a field shift pulse, said vertical transfer section vertically transferring the transferred charges in units of lines and at a high speed;
first field memory means, having a one-field storage capacity for storing charges transferred from said vertical transfer section;
second field memory means, having a one-field storage capacity for storing charges transferred from said vertical transfer section;
transfer means for alternately transferring, in units of lines, the charges transferred from said vertical transfer section to said first and second field memory means;
read means for reading out the charges stored in said first field memory means and reading out the charges stored in said second field memory means;
and
a horizontal transfer section for horizontally transferring, in units of lines, the charges read out by said read means.

5 more elements

Dependencies are inferred from the claim text.