Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
AssigneeOmron Tateisi Electronics Co.
InventorsKoichi Imanaka, Hiroshi Imamoto
Life of this patent
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Abstract
A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs: Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.
Claims6
A method of manufacturing a semiconductor laser having an internal current restriction, comprising the steps of:
- (a) forming a groove or difference in level exposing an (n11) (n=1-5) A face on a (100) face-oriented p-type GaAs substrate or GaAs substrate having a (100) face-oriented p-type GaAs layer as a surface layer;
- (b) growing Si-doped AlGaAs or GaAs layer thereon;
- and
- (c) providing thereon a double heterojunction structure having an n-type cladding layer in the form of tin-doped AlGaAs.
A method of manufacturing a semiconductor laser having an internal current restriction, comprising the steps of:
- (a) forming a groove or difference in level exposing an (n11) (n=1-3) A face on a (100) face-oriented p-type GaAs substrate or GaAs substrate having a (100) face-oriented p-type GaAs layer as a surface layer;
- (b) growing Si-doped AlGaAs or GaAs layer thereon;
- (c) providing thereon a double heterojunction structure having an n-type cladding layer in the form of an Si-doped AlGaAs layer;
- and
- (d) further providing an n-type cap layer.
Dependencies are inferred from the claim text.