Controlled reflectance solar cell
AssigneeSpectrolab, Inc.
InventorsHans G. Dill, David R. Lillington
Life of this patent
Estimating the term…
Abstract
A solar cell is disclosed wherein both the emitter and the base electrical contacts for a solar cell are disposed on the back major surface. Holes extend through the back major surface and the base layer to the emitter layer. The walls of the holes are doped to the same conductivity as the front emitter layer. Emitter contacts are deposited on the back major surface of the cell and extend into the holes making electrical contact to the emitter layer for collecting light generated current carriers. The base contacts are also disposed on the back major surface, and antireflection coatings are deposited on the emitter front major layer. Consequently, the front of the solar cell can be made smooth and therefore, a specularly reflective (non-scattering) solar cell results.
Claims22
A solar cell comprising:
- A semiconductor body having a front layer of a first conductivity type and an adjacent back layer of a second conductivity type opposite of said first conductivity type, said front and back layers forming front and back major surfaces, respectively said semiconductor body further having a plurality of openings through said back major surface and back layer which form recesses extending to said front layer, said recesses having walls which are doped to said first conductivity type;
- a first electrical contact disposed in said recesses making electrical contact to said first conductivity type layer;
- and
- a second electrical contact disposed on said back major surface making electrical contact to said second conductivity type layer.
A solar cell comprising:
- a semiconductor body having an n-type conductivity layer and an adjacent p-type conductivity layer, front and back major surfaces, respectively, and an n-p junction between said layers, said semiconductor body further having a plurality of openings through said back major surface which form recesses extending up to said n-p junction, the interior wall surfaces of said recesses having a thin layer of n-type semiconductor material disposed therein;
- a p-type electrical contact disposed on said back major surface;
- an insulator layer disposed on a portion of said back major surface adjacent said openings;
- an n-type electrical contact disposed on said n-type semiconductor material in said recesses, said n-type electrical contact being separated from said p-type semiconductor material by said insulator layer.
A solar cell comprising:
- a semiconductor body having a p-type conductivity layer and an adjacent n-type conductivity layer, front and back major surfaces, respectively, and a p-n junction between said layers, said semiconductor body further having a plurality of openings through said back major surface which form recesses extending up to said p-n junction, the interior wall surfaces of said recesses having a thin layer of p-type semiconductor material disposed thereon;
- an n-type electrical contact disposed on said back major surface;
- an insulator layer disposed on a portion of said back major surface adjacent said openings;
- a p-type electrical contact disposed on said p-type semiconductor material in said recesses, said p-type electrical contact being separated from said n-type semiconductor material by said insulator layer.
A method of fabricating a solar cell, comprising the steps of:
- providing a wafer of semiconductor material of a first conductivity having front and back essentially parallel major surfaces;
- forming a second conductivity layer under said front major surface of said wafer thereby defining a p-n junction between said first and second conductivity layer in a plane essentially parallel to said front and back major surfaces;
- depositing an antireflection coating on said front major surface;
- depositing a layer of nonconductive material on said back major surface;
- forming a plurality of openings in said wafer which form recesses extending through said layer of insulating material and said back major surface up to said p-n junction;
- diffusing a dopant of said second conductivity type in the walls of said recesses to form a thin layer of semiconductor material doped to a second conductivity type;
- depositing metallization on said back major surface to form a plurality of contacts including an electrical contact on said back major surface to said first conductivity semiconductor material and a contact to said second conductivity layer and said openings.
Dependencies are inferred from the claim text.