Dielectric inks for multilayer copper circuits
AssigneeGeneral Electric Company
InventorsKenneth W. Hang, Ashok N. Prabhu, Wayne M. Anderson
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Abstract
An improved dielectric ink for the fabrication of multilayer integrated circuits is disclosed. The subject inks comprise a devitrifying magnesium-barium-aluminum-zirconium-borophosphosilicate glass frit, an organic vehicle and, optionally, a suitable ceramic filler material. Dielectric layers and stand-alone substrates formed from the subject inks are characterized by good mechanical strength, heat resistance and exceptional density. The subject inks are particularly useful in the fabrication of multilayer circuit structures based on copper since their exceptional density renders them resistant to penetration by flux materials from the copper conductor layers.
Claims10
A dielectric ink for multilayer integrated circuit fabrication comprising:
- (a) from about 60 to about 85 percent by weight of a glass frit comprising, on a weight basis:
- from about 25 to about 31 percent of magnesium oxide;
- from about 9 to about 18 percent of barium oxide;
- from about 10 to about 18 percent of aluminum oxide;
- from about 10 to about 15 percent of boron trioxide;
- from about 24 to about 34 percent of silicon dioxide;
- from about 0.6 to about 0.8 percent of phosphorus pentoxide;
- from about 2.5 to about 4.5 percent of zirconium silicate;
- from 0 to about 2 percent of antimony trioxide;
- and from 0 to about 0.3 percent of cerium oxide;
- (b) up to about 15 percent by weight of a ceramic filler;
- and
- (c) from about 15 to about 30 percent by weight of a organic vehicle.
Dependencies are inferred from the claim text.