Semiconductor manufacturing apparatus
OwnerTadahiro Ohmiinventor
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Abstract
A semiconductor manufacturing for depositing an insulating thin film on a surface of a semiconductor substrate in a vacuum vessel at an atmosphere of reduced pressure, wherein radiofrequency powers each having different first and second radiofrequencies are applied respectively to a target electrode composed of a material for an insulating thin film and a succeptor electrode for holding said semiconductor substrate. The first frequency is selected to be lower than said second frequency, whereby a high quality insulating film having a surface excellent in flatness can be assured without damaging the substrate.
Claims12
A semiconductor manufacturing apparatus for depositing an insulating thin film on the surface of a semiconductor substrate in a vacuum vessel at an atmosphere of reduced pressure, comprising:
- a target composed of a material for said insulating thin film or of at least one of constituent elements of said material for the insulating thin film;
- wherein the semiconductor substrate is adapted to be disposed spaced apart from the target in a confronting relation therewith for permitting the insulating film of the target to be deposited thereon;
- a first radiofrequency power source for generating first radiofrequency power of a first frequency for application to the target;
- a succeptor electrode adapted to support the semiconductor substrate thereon;
- a second radiofrequency power source for generating second radiofrequency power of a second frequency for application to the succeptor electrode;
- and
- said first frequency being selected to be lower than said second frequency.
Dependencies are inferred from the claim text.