Tunnel and field effect carrier ballistics

In a method of interacting carriers with a structure of matter, the improvement comprising in combination the steps of:

• providing said structure with a base electrode and with a collector electrode spaced from said base electrode;
• providing an emitter electrode for emitting said carriers at a distance from a surface of said structure;
• causing said carriers to travel along ballistic trajectories inside said structure by providing along said distance a gap for performance of process selected from the group of carrier tunneling and field emission and injecting said carriers emitted by said emitter electrode with said process ballistically into said structure through said gap and said surface;
• scanning said structure with said electrode;
• collecting said ballistically injected carriers from said structure;
• and
• deriving information about an internal quality of said structure with the said of said carriers ballistically injected into said structure by combining and plotting signals from said base and collector electrodes during said scanning.

In apparatus for interacting carriers with a layered structure including an interface therein, the improvement comprising in combination:

• an emitter electrode for emitting said carriers at a distance from a surface of said layered structure;
• means for causing said carriers to travel along ballistic trajectories inside said layered structure, including means for providing along said distance a gap for performance of a process selected from the group of carrier tunneling and field emission, and means for injecting said carriers emitted by said emitter electrode with said process ballistically into said structure through said gap and said surface;
• and
• means for analyzing interface properties in said layered structure, including means for collecting said carriers after travel along said ballistic trajectories from said interface in said structure.

In a method of interacting carriers with a structure of matter, the improvement comprising in combination the steps of:

• providing a first electrode for emitting said carriers at a distance from a surface of said structure;
• providing said structure with a second electrode spaced from said first electrode by a gap requisite for performance of a process selected from the group of carrier tunneling and field emission causing said carriers to travel along ballistic trajectories inside said structure;
• providing said structure with a third electrode spaced from said second electrode so that said trajectories extend between said second and third electrodes;
• ballistically injecting said carriers with said first and second electrodes through said gap into said structure for travel along said trajectories;
• collecting said ballistically injected electrodes from said trajectories with said third electrode, and
• analyzing said carriers after said travel along said ballistic trajectories in said structure.

In apparatus for interacting carriers with a multielectrode semiconductor device, the improvement comprising in combination:

• an emitter electrode for emitting said carriers at a distance from a surface of said structure;
• means for causing said emitter electrode to inject said carriers ballistically into said structure through said gap and said surface and for causing injected carriers to travel along ballistic trajectories inside said structure, including means for providing along said distance gap between said emitter electrode and one electrode of said multielectrode semiconductor device for performance of a process selected from the group of carrier tunneling and field emission;
• and
• means including another electrode of said multielectrode semiconductor device for collecting said carriers after said travel along said ballistic trajectories in said structure.