Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
AssigneeKabushiki Kaisha Toshiba
InventorsYasunobu Onishi, Shuji Hayase, Rumiko Horiguchi, Akiko Hirao
Life of this patent
Estimating the term…
Loading patent…
AssigneeKabushiki Kaisha Toshiba
InventorsYasunobu Onishi, Shuji Hayase, Rumiko Horiguchi, Akiko Hirao
Estimating the term…
The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group. One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above. Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent. Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays. Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.
A silicone containing resist material for forming a resist pattern on a semiconducting material by exposure to irradiation and alkaline development, comprising a photosensitive agent and a polysiloxane that contains a structure consisting essentially of units of the formula:
Dependencies are inferred from the claim text.