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AssigneeHitachi, Ltd.
InventorsNobuyuki Ushifusa, Hiroichi Shinohara, Kousei Nagayama, Satoru Ogihara, Tasao Soga
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A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layer has a thermal expansion coefficient lower than that of the wiring conductor and not lower than one half of that of the conductor layer and is formed from a glass which softens at a temperature not higher than the melting point of the wiring conductor layer; a semiconductor module having a high reliability in its solder joint part comprising said ceramic multilayer circuit board mounted with a ceramic carrier substrate being mounted with a semiconductor device, said board being able to use a silver or copper conductor having a good electro-conductivity; and an amorphous glass powder for said ceramic multilayer circuit board.
A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layers are formed from a glass which consists essentially of 20 to 85% of SiO.sub.2 and at least one member selected from 25% or less of Al.sub.2 O.sub.3, 1 to 25% of MgO, 50% or less of B.sub.2 O.sub.3, 15 to 25% of ZnO, 10 to 25% of CaO, 2 to 20% of Li.sub.2 O, 10% or less of K.sub.2 O, 50 to 60% AlPO.sub.4, 25 to 35% Y.sub.2 O.sub.3, 5% or less of P.sub.2 O.sub.5, 5% or less of ZrO.sub.2, 5% or less of CaF.sub.2, 6% or less of AlN, 5% or less of Cs.sub.2 O, and 5% or less of V.sub.2 O.sub.5, each by weight, and which softens at a temperature not higher than the melting point of the wiring conductor layer and wherein the ceramic layer has a thermal expansion coefficient lower than that of the wiring layer but not lower than one half that of the wiring layer.
A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layer has a thermal expansion coefficient lower than, and not lower than one half of, that of the wiring conductor layer, and further comprises hollow silica having a particle diameter of not more than 100 .mu.m dispersed in a glass which softens at a temperature not higher than the melting point of the wiring conductor layer.
A semiconductor module comprising a ceramic multilayer circuit board mounted with a ceramic carrier substrate, said carrier substrate being mounted with a semiconductor device, in which the carrier substrate and the multilayer circuit board each comprise ceramic layers and wiring conductor layers laminated alternately, and the ceramic layer has a thermal expansion coefficient lower than, and not lower than one half of, that of the wiring conductor layer and further the ceramic layer comprises a glass which softens at a temperature not higher than the melting point of the wiring conductor layer.
Dependencies are inferred from the claim text.