Evaporation source with a shaped nozzle

A method of forming a thin film comprising the steps of:

• heating an evaporation material to vaporize said evaporation material;
• jetting said vaporized material through a nozzle toward a substrate to be deposited with said evaporation material, said jetting thereby forming clusters composed of a plurality of atoms of said evaporation material, said nozzle having an aperture with a diverging portion having a cross-section gradully enlarging in a direction toward said substrate:
• ionizing said clusters to thereby form cluster ions;
• acclerating said cluster ions toward said substrate to collide thereagainst to thereby form a thin film;
• setting an opening angle of said diverging portion of said aperture to thereby adjust a thickness distribution of said thin film on said substrate;
• wherein said setting step is accomplished by maintaining a plurality of nozzles having a same minimum diameter portion, respective nozzles in said plurality having an enlarging portion which differs from the enlarging portion of other respective nozzles in said plurality, and wherein said setting of an opening angle is accomplished by selecting one nozzle from said plurality;
• and
• wherein said aperture of said nozzle additionally has a converging portion having a cross-section gradually decreasing in a direction toward said substrate, and additionally having a cylindrical portion having a substantially constant diameter, said cylindrical portion corresponding to said minimum diameter portion and connecting said diverging portion with said converging portion.

A method of forming a thin film comprising the steps of:

• heating an evaporation material to vaporize said evaporation material;
• jetting said vaporized material through a nozzle toward a substrate to be deposited with said evaporation material, said jetting thereby forming clusters composed of a plurality of atoms of said evaporation material, said nozzle having an aperture with a diverging portion having a ctoss-section gradually enlarging in a direction toward said substrate;
• ionizing said clusters to thereby form cluster ions;
• accelerating said cluster ions toward said substrate to collide thereagainst to thereby form a thin film;
• setting an opening angle of said diverging portion of said aperture to thereby adjust a thickness distribution of said thin film on said substrate;
• and
• wherein, said heating step comprises bombarding a surface of a crucible holding said evaporation material with electrons.

A method of forming a thin film, comprising the steps of:

• heating an evaporation material to vaporize said evaporation material;
• jetting said vaporized material through a nozzle toward a substrate to be deposited with said evaporation material, said jetting thereby forming clusters composed of a plurality of atoms of said evaporation material, said nozzle having an aperture with a diverging portion having a cross-section gradually enlarging in a direction toward said substrate;
• ionizing said clusters to thereby form cluster ions;
• accelerating said cluster ions toward said substrate to collide thereagainst to thereby form a thin film;
• setting an opening angle of said diverging portion of said aperture to thereby adjust a thickness distribution of said thin film on said substrate;
• and
• wherein said aperture of said nozzle has a converging portion between said evaporation material and said diverging portion of a cross-section gradually decreasing in a direction toward said diverging portion.