Thermally conductive, electrically insulative laminate

Base means for mounting semiconductor devices onto a heat dissipating thermally conductive support and comprising:

• (a) a base substrate means comprising a sheet of at least one layer of a thermally conductive metal selected from the group consisting of copper, aluminum, steel, Alloy 42, Invar, Kovar and molybdenum and laminates thereof, and with said base substrate having a cross-sectional thickness in excess of about 15 mils and arranged along one surface of said base means;
• (b) electrically conductive circuitry arranged in oppositely disposed relationship to said base substrate means and having a thickness in excess of about one-quarter mil and having means arranged on the outer surface thereof to mountingly receive and support a semiconductor device in heat dissipating relationship thereon;
• (c) heat spreader means comprising a highly thermally conductive metallic layer selected from the group consisting of aluminum and copper and being interposed between said base substrate and said electrically conductive circuitry;
• (d) a pair of imperforate polyimide(amide) films, one interposed between said heat spreader means and said base substrate means and one interposed between said heat spreader means and said electrically conductive circuitry;
• (e) a substantially continuous void-free adhesive film bonding adjacent members of said base means together, one to another, each of said imperforate polyimide(amide) films and said adhesive layers each containing a thermally conductive electrically insulative particulate solid therein selected from the group consisting of aluminum oxide, boron nitride, silica, beryllium oxide, magnesium oxide, titanium dioxide, aluminum nitride, silicon carbide, zinc oxide, and silicon nitride in an amount from between 20% and 200% by weight of polyimide(amide) solids and adhesive solids respectively, and with the polyimide(amide) film having a thickness in excess of about one-quarter mil.

Base means for mounting semiconductor devices onto a heat dissipating thermally conductive support and comprising:

• (a) a base substrate means comprising a sheet of at least one layer of a thermally conductive metal selected from the group consisting of copper, aluminum, steel, Alloy 42, Invar, Kovar and molybdenum and laminates thereof, and with said base substrate having a cross-sectional thickness in excess of about 15 mils and arranged along one surface of said base means;
• (b) electrically conductive circuitry arranged in oppositely disposed relationship to said base substrate means and having a thickness in excess of about one-quarter mil and having means arranged on the outer surface thereof to mountingly receive and support a semiconductor device in heat dissipating relationship thereon;
• (c) means comprising highly thermally conductive layers interposed between said substrate and said electrically conductive circuitry, said means comprising at least two imperforate layers interposed therebetween;
• (d) a substantially continuous void-free epoxy resin adhesive film bonding adjacent members of said base means together, one to another, each of said imperforate films and said adhesive layers each containing a thermally conductive electrically insulative particulate solid therein selected from the group consisting of aluminum oxide, boron nitride, silica, beryllium oxide, magnesium oxide, titanium dioxide, aluminum nitride, silicon carbide, zinc oxide, and silicon nitride in an amount from between 20% and 200% by weight of imperforate solids and adhesive solids respectively, and with the imperforate film consisting essentially of an epoxy resin and having a thickness in excess of about one-quarter mil.

Base means for mounting semiconductor devices onto a heat dissipating thermally conductive support and comprising:

• (a) a base substrate means comprising a sheet of at least one layer of a thermally conductive metal slelected from the group consisting of copper, aluminum, steel, Alloy 42, Invar Kovar and molybdenum and laminates thereof, and with said base substrate having a cross-sectional thickness in excess of about 15 mils and arranged along one surface of said base means;
• (b) electrically conductive circuitry arranged in oppositely disposed relationship to said base substrate means and having a thickness in excess of about one-quarter mil and having means arranged along and adjacent the outer surface of said circuitry to mountingly receive and support the undersurface of a semiconductor device in heat dissipating relationship thereon;
• (c) heat spreader means comprising a highly thermally conductive metallic layer selected from the group consisting of aluminum and copper and being interposed between said substrate and said electrically conductive circuitry;
• (d) a pair of imperforate films, one interposed between said heat spreader means and said base substrate means and one interposed between said heat spreader means and said electrically conductive circuitry;
• (e) a substantially continuous void-free epoxy resin adhesive film bonding adjacent members of said base means together, one to another, each of said imperforate films and said adhesive layers each containing a thermally conductive electrically insulative particulate solid therein selected from the group consisting of aluminum oxide, boron nitride, silica, beryllium oxide, magnesium oxide, titanium dioxide, aluminum nitride, silicon carbide, zinc oxide, and silicon nitride in an amount from between 20% and .RTM.% by weight of imperforate solids and adhesive solids respectively, and with the imperforate film having a thickness in excess of about one-quarter mil.