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US 4,808,511 AGranted
Vapor phase photoresist silylation process
AssigneeInternational Business Machines Corporation
InventorSteven J. Holmes
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Abstract
A process for improved vapor phase silylation of photoresist is disclosed. The process uses silylation materials which either produce a strong base such as dimethylamine upon reaction with a resist film or which contain an improved chemical leaving group such as acetate. The process is effective at temperatures of 135 C. and below. Preferred silylation materials are N,N-dimethylaminotrimethylsilane and trimethylsilylacetate.
Claims3
A vapor phase photoresist silylation process comprising the steps of:
- coating a substrate with a photoresist film that contains a masked reactive functionality;
- imagewise exposing said film to radiation under conditions that cause unmasking of the reactive functionality in the exposed regions of the film;
- treating said exposed film with a silylating agent having the formula SiR.sub.4 wherein one of said R groups is an acetate group;
- and developing the resulting image by RIE to obtain a negative tone relief image.
1 more element
A vapor phase photoresist silylation process comprising the steps of:
- coating a substrate with a photoresist film that contains a masked reactive functionality;
- imagewise exposing said film to radiation under conditions that cause unmasking of the reactive functionality in the exposed regions of the film;
- treating said exposed film with a silylating agent, wherein said silylating agent is trimethylsilylacetate;
- and
- developing the resulting image by RIE to obtain a negative tone relief image.
2 more elements
Dependencies are inferred from the claim text.