US 4,806,997 AGranted

Double heterostructure optoelectronic switch

AssigneeAT&T Laboratories American Telephone and Telegraph Company

InventorsJohn G. Simmons, Geoffrey W. Taylor

Life of this patent

Estimating the term…

A double heterostructure opto-electronic device capable of both electronic and photonic switching is described.

Dependent claims

A switch comprising first and second regions having a first conductivity type and first and second bandgaps;

said regions having an interface adapted to the formation of an inversion layer, a third region, said third region having a second conductivity type and a third bandgap, said second bandgap being less than said first and third bandgaps, said second and third regions having an interface;
said first, second and third regions comprising semiconductors selected from the group consisting of Group II-VI and Group III-V semiconductors, electrical contacts to said first and at least one of said second and third regions;
and means for optically illuminating said second region.

Dependencies are inferred from the claim text.

G02F 3/00
Optical logic elements
H03K 19/14
Using specified components: using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
H10F 30/263
The devices having three or more potential barriers, e.g. photothyristors: photothyristors
H10F 55/155
Wherein the radiation-sensitive devices and the electric light source are all semiconductor devices: formed in, or on, a common substrate

From the US filing history. Foreign family members aren’t listed.

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