Monolithic two dimensional waveguide coupled cavity laser/modulator

Abstract

A monolithic two dimensional waveguide coupled cavity laser/modulator structure for high speed modulation comprising a plurality of semiconductor layers on a semiconductor substrate. One of the semiconductor layers functions as an active region. Impurity induced disordering techniques are utilized to form first and second active mediums in the structure having co-axial two dimensional optical cavities. One of these active mediums functions as a laser and the other as a modulator. A passive two dimensional waveguide is integrally formed between the two active mediums having a highest refractive index at its core with diminishing refractive index omnidirectionally from its core with waveguide core having a energy bandgap level higher than both of the active mediums exhibiting low optical absorption at the gain wavelength of either of the active mediums. The modulator can be operated between an electro-absorption mode and a gain modulation mode while the laser is current pumped above threshold with the modulated optical switching of the output of said laser being less than 100 picoseconds as a function of applied voltage to said modulator varied in a range of 0 to 2 volts as illustrated by the curves in FIG. 14.

Dependencies are inferred from the claim text.