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US 4,800,179 AGranted
Method for fabricating semiconductor device
AssigneeFujitsu Limited
InventorRyoichi Mukai
Life of this patent
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Abstract
A method for fabricating a semiconductor device comprises forming a contact hole in an insulating film formed on a first wiring composed of an Al film, covering the insulating film with an Al film for a second wiring, applying laser beam pulses to the Al film for a second wiring from above, and patterning the Al film to form a second wiring.
Claims6
A method for fabricating a semiconductor device, which comprises:
- forming a contact hole in an insulating film formed on a first wiring composed of first Al film;
- covering the insulating film with a second Al film for a second wiring;
- applying laser beam pulses of an intensity and a pulse width to the Al second film for the second wiring from above so as to remove any oxide or adsorbed material formed on the first Al film to the first wiring, and
- patterning the second Al film to form the second wiring.
1 more element
Dependencies are inferred from the claim text.