Method for forming Cu In Se.sub.2 films
AssigneeAtlantic Richfield Company
InventorsJames H. Ermer, Robert B. Love
Life of this patent
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Abstract
A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in the presence of gas containing selenium at a temperature selected to cause interdiffusion of the elements and formation of a high quality copper indium diselenide film. In a preferred form, an insulating substrate is used and an electrical contact is first deposited thereon in the same DC magnetron sputtering apparatus prior to deposition of the copper and indium films.
Claims7
A method for fabricating a copper indium diselenide semiconductor film comprising:
- in a single vacuum chamber sequentially depositing a film of copper on a substrate by DC magnetron sputtering from a first cathode and depositing indium on said film of copper by DC magnetron sputtering from a second cathode to form a composite film of copper and indium;
- and
- heating said composite film of copper and indium in the presence of a source of selenium at a temperature and for a time selected to cause interdiffusion of copper, indium and selenium to form a copper indium diselenide film.
Dependencies are inferred from the claim text.