Opto-electronic device

Abstract

An opto-electronic device has an atomic layer superlattice semiconductor comprising different semiconductor materials periodically piled up, each material having an atomic layer thickness. The superlattice semiconductor has a bandgap different from an alloy semiconductor having equivalently the same composition as the former. In a semiconductor laser, as clad layers, the atomic layer superlattice semiconductor having equivalently the same composition as a Zn.sub.0.42 Cd.sub.0.58 S alloy semiconductor and a larger bandgap than the later is used, and a ZnSe.sub.0.94 S.sub.0.06 alloy semiconductor as an active layer is located between the cladding layers. The double-hetero structure semiconductor laser thus provided can perform the lasing at 470 nm at room temperature.

Dependencies are inferred from the claim text.