Semiconductor laser
AssigneeSharp Kabushiki Kaisha
InventorsSaburo Yamamoto, Hiroshi Hayashi, Taiji Morimoto, Seiki Yano
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Abstract
A semiconductor laser comprising a substrate for crystal growth having a striped channel, an active layer for laser oscillation, a cladding layer containing Mg which is in contact with said active layer at the side of said striped channel substrate.
Claims7
In a semiconductor laser for laser oscillation at a short wavelength of visible light and of the type including a substrate having a striped channel in one surface thereof, an active layer for laser oscillation disposed on said one surface of said substrate above said striped channel, and a cladding layer containing Mg which is in contact with said active layer and disposed between said active layer and said one surface of said substrate;
- the improvement wherein a filler layer containing Mg is disposed between said one surface of said substrate having said striped channel and one surface of said cladding layer, contacts said one surface of said cladding layer, and fills said channel in said substrate, with the Mg content of said filler layer being less than that of said cladding layer.
Dependencies are inferred from the claim text.