Laser diode
AssigneeSiemens Aktiengesellschaft
InventorsGustav Mueller, Engelbert Hartl, Martin Honsberg
Life of this patent
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Abstract
A laser diode is provided having a strip-shaped web based on the principle of a metal clad ridge waveguide laser diode with a strip-shaped web width of less than 10 .mu.m. At least one lateral web extends laterally of the strip-shaped web and serves as a carrier for an electrical connection between the metal cladding of the strip-shaped web and a contacting surface for an electrical lead.
Claims17
An improved laser diode formed of a semiconductor-layer double hetero-layer structure on a substrate having an electrode, the double hetero-layer structure including a strip-shaped ridge less then 10 .mu.m wide and a contact coating wherein a third layer of the double hetero-layer structure is adjacent a second laser-active layer and between said laser-active layer and the contact coating, the third layer having a reduced thickness laterally of the ridge for wave guidance, the improvement comprising:
- said contact coating being restricted to essestially an upper side of said strip-shaped ridge;
- at least one lateral ridge extending laterally of said strip-shaped ridge;
- a contacting surface being connected to said strip-shaped ridge by said at least one lateral ridge;
- said third layer of said double hetero-layer structure being reduced to a thickness of between 0.4 .mu.m and 0 .mu.m laterally of said strip-shaped ridge and outside said at least on lateral ridge;
- said second laser-active layer being present in a non-reduced thickness laterally of said strip-shaped ridge and outside of said at least one lateral ridge;
- and
- an electrical connection between said contact coating of said strip-shaped ridge and said contacting surface formed on the upper side of said at least one lateral ridge.
A laser diode, comprising:
- a substrate having an electrode;
- a double hetero-structure built up on said substrate having at least a laser-active layer and a thid layer over said laser-active layer, said third layer having a thickness of at least 0.4 .mu.m;
- an elongated ridge formed in said double hetero-structure by a reduction in the thickness of said third layer to between 0.4 .mu.m and 0 .mu.m laterally of said elongated ridge;
- a metallic contact extending along a top surface of said elongated ridge;
- a contact surface electrically insulated from said laser-active layer;
- an electrical lead connected at said contact surface;
- and
- at least one lateral ridge extending between said elongated ridge and said contact surface and including means for conducting electricity between said contact surface and said metallic contact on said elongated ridge.
Dependencies are inferred from the claim text.