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US 4,792,836 AGranted
Ion-sensitive photodetector
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorKenneth P. Quinlan
Life of this patent
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Abstract
A photodetector using a modified ion-sensitive field effect transistor has therein a layer of photoactive material. Upon exposure to a beam of light the photoactive material produces a charge-separation (with proton movement) therein which affects the drain current. The change in gate voltage to stabilizes the drain current is a measure of the intensity of the light input.
Claims1
A photodetector, said photodetector comprising:
- a planar substrate of a semiconductor material being doped;
- a metallic layer, said metallic layer being deposited upon a bottom surface of said substrate, said metallic layer having a common lead attached thereon;
- a source, said source being located within said substrate and having a surface coplanar with said substrate, said source being substantially rectangular shaped in cross-section, said source being doped opposite than said substrate;
- a drain, said drain being located within said substrate and opposite to said source and parallel thereto, said drain having a surface coplanar with said substrate, said drain being shaped substantially like said source, said drain being doped the same as said source;
- an ion-sensitive layer, said ion-sensitive layer being deposited on a top surface of said substrate and overlapping said source and said drain, said ion-sensitive layer being electrically non-conductive;
- a source current conductor connected to said source, said source current conductor having a source lead connected thereto;
- a drain current conductor connected to said drain, said drain current conductor having a drain lead connected thereto;
- an insulating layer deposited on said top surface of said substrate, said insulating layer overlapping said source, said drain, and said substrate, and having an opening therethrough, said conductors being deposited upon said insulating layer;
- an encapsulating layer, said encapsulating layer having a well therethrough and having a bottom surface on said ion-sensitive layer, said encapsulating layer in contact with said insulating layer, said conductors, said source, and said drain;
- a photoactive layer, said photoactive layer being placed within said well of said encapsulating layer, said photoactive layer being responsive to a band of wavelengths of light, a response being directly related to the intensity of said light;
- a window, said window positioned over said well and in contact with a top surface of said encapsulating layer, said window sealing said photoactive layer within said well and allowing light to pass therethrough;
- and
- a gate electrode, said electrode being deposited on said window over said well and having a gate electrode lead attached thereto.
10 more elements
Dependencies are inferred from the claim text.