Back to results
US 4,792,461 AGranted
Method of forming a photomask material
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYaichiro Watakabe, Shuichi Matsuda
Life of this patent
Estimating the term…
Abstract
A silicide film of oxidized transition metal 3 formed on a transparent substrate 1 has a low reflectance and in consequence, a high resolution can be obtained and dry etching thereof can be easily done. In addition, since said silicide film 3 has good adhesion to a transparent substrate 1, file patterns therein do not peel off at the time of rinsing the mask.
Claims10
A method of forming a photomask material on a transparent substrate, suitable for use in manufacturing a semiconductor device, comprising the steps of:
- depositing on said transparent substrate a film of a silicide of an oxidized transition metal.
Dependencies are inferred from the claim text.