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US 4,791,650 AGranted
Phased-array semiconductor laser apparatus
AssigneeHitachi, Ltd.
InventorsKimio Tatsuno, Yoshito Tsunoda
Life of this patent
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Abstract
A phased-array semiconductor laser having a plurality of light emitting regions aligned in a line and providing correlation of the oscillation phases between adjacent light emitting regions, and including a beam controlling system for providing the phased-array semiconductor laser having a far-field pattern of a single-lobe.
Claims8
A phased-array semiconductor laser apparatus comprising:
- a phased-array semiconductor laser having a plurality of light emitting regions aligned on a single substrate such that the modes of oscillation of each of the plurality of light emitting regions are phase-locked to one another so as to provide an output laser beam which has a far-field pattern of two lobes;
- and
- an optical system for converging the output laser beam from said phased-array semiconductor laser onto a recording medium, said optical system including a half-wave plate disposed in the optical path of a first part of the output laser beam forming a first one of the two lobes and a polarization beam splitter for combining the first part of the output laser beam from said half-wave plate with a second part of the laser beam which forms a second one of the two lobes so that a combined laser beam having a far-field pattern of a single lobe is provided for being converged onto the recording medium.
A phased-array semiconductor laser apparatus comprising:
- a phased-array semiconductor laser having a plurality of light emitting regions aligned on a single substrate such that the modes of oscillation of each of the plurality of light emitting regions are phase-locked to one another so as to provide an output laser beam which has a far-field pattern of two lobes;
- at least one thin film having an optical thickness of .lambda./2 (where .lambda. is a wave length of the light emitted by each light-emitting region) being disposed on the single substrate and covering every other one of said plurality of light emitting regions such that said phased-array semiconductor laser provides an output laser beam with a far-field pattern of a single-lobe;
- and
- an optical system for converging the output laser beam from said phased-array semiconductor laser onto a recording medium.
1 more element
A phased-array semiconductor laser apparatus comprising:
- a phased-array semiconductor laser having a plurality of light emitting regions aligned on a single substrate such that the modes of oscillation of each of the plurality of light emitting regions are phase-locked to one another so as to provide an output laser beam which has a far-field pattern of two lobes;
- first lens means for condensing the output laser beam from said phased-array semiconductor laser;
- a half-wave plate for providing a phase shift of one-half (1/2) wavelength to a first part of the laser beam forming one of the two lobes condensed by said first lens means;
- a polarization beam splitter for combining the first part of the laser beam transmitted through said half-wave plate and a second part of the laser beam forming another of the two lobes condensed by said first lens means so as to provide a combined laser beam having a far-field pattern of a single-lobe;
- beam shaping means for shaping the combined beam from said polarization beam splitter;
- and
- second lens means for converging the combined laser beam shaped by said beam shaping means onto a recording medium.
4 more elements
A phased-array semiconductor laser apparatus comprising:
- a phased-array semiconductor laser having a plurality of light emitting regions aligned on a single substrate such that the modes of oscillation of each of the plurality of light emitting regions are phase-locked to one another so as to provide an output laser beam which has a far-field pattern of two lobes;
- at least one thin film having an optical thickness of .lambda./2 (where .lambda. is a wave length of the light emitted by each light-emitting region) being disposed on the single substrate and covering every other one of the plurality of light emitting regions such that said phased-array semiconductor laser provides an output laser beam with a far-field pattern of a single-lobe;
- first lens means for condensing the output laser beam from said phased-array semiconductor laser;
- and
- beam shaping means for shaping the laser beam condensed by said first lens means;
- and
- second lens means for converging the laser beam shaped by said beam shaping means onto a recording medium.
4 more elements
Dependencies are inferred from the claim text.