US 4,791,646 A · Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns

Abstract

A method of providing an optoelectronic device is disclosed in which the spatial gain profile within the device is tailored by a predetermined pattern of injecting and noninjecting contacts over the surface of the device with variation in the fractional surface coverage per unit area of injecting to noninjecting contact, thereby providing nearly arbitrary two-dimensional spatial gain profile within the optoelectronic device. A tailored gain broad area semiconductor laser fabricated by this method is capable of high power operation with very narrow, single lobed farfield patterns.

Claims4

Dependent claims

A broad area injection semiconductor laser having a predetermined two-dimensional pattern of injecting and noninjecting contacts over a broad area of said device in which laser the two-dimensional spatial gain profile is tailored over said broad area to conform to a predetermined tailored pattern of varying injection by a predetermined contact pattern of injecting and noninjecting areas over said broad area of said, said contact pattern being achieved by variation in the fractional surface coverage per unit area of injecting to noninjecting contact, thereby achieving said predetermined pattern of two-dimensional spatial gain profile.

Dependencies are inferred from the claim text.

Facts

Application

07/129,375Filed 23 Nov 1987 · continuation

Priority

31 Jul 1985

Granted

13 Dec 1988

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H01S 5/1053
Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or…:…
H01S 5/0014
Semiconductor lasers: measuring characteristics or properties thereof
H01S 5/04254
Electrodes, e.g. characterised by the structure: characterised by the shape
H01S 5/04252
Electrodes, e.g. characterised by the structure: characterised by the material

Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns

Life of this patent

Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns

Life of this patent

Abstract

Claims4