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US 4,791,471 AGranted
Semiconductor integrated circuit device
AssigneeFujitsu Limited
InventorsTsukasa Onodera, Haruo Kawata, Toshiro Futatsugi
Life of this patent
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Abstract
In a semiconductor integrated circuit device, a plurality of a field effect transistors are formed on a (110) crystal surface of a group III-V compound semiconductor substrate having a zinc blend type crystal structure.
Claims7
A semiconductor integrated circuit device, comprising:
- a compound semiconductor substrate formed of a group III-V compound semiconductor having a zinc blend type crystal structure, the surface of said compound semiconductor substrate being a (110) crystal surface;
- a plurality of field effect transistors, each including:
- source and drain regions formed at the surface of said compound semiconductor substrate and positioned such that the direction of a drain current is [001] with respect to said compound semiconductor substrate;
- and
- a gate electrode formed directly on the surface of said compound semiconductor substrate and between said source and drain regions, said gate electrode forming a Schottky contact with said compound semiconductor substrate;
- and
- an insulating layer formed on said gate electrode and directly on the surface of said compound semiconductor substrate adjacent to said gate electrode, said insulating layer exerting a tensile stress on said compound semiconductor substrate, the stress being applied to said compound semiconductor substrate at a boundary portion between said gate electrode and said insulating layer.
4 more elements
A semiconductor integrated circuit device comprising:
- a compound semiconductor substrate formed of a group III-V compound semiconductor having a zinc blend type crystal structure, a surface of said compound semiconductor substrate being a (110) crystal surface;
- a plurality of field effect transistors, each of said transistors including:
- source and drain regions formed at the surface of said compound semiconductor substrate and positioned such that the direction of a drain current is [001] with respect to said compound semiconductor substrate;
- and
- a gate electrode formed directly on the surface of said compound semiconductor substrate between said source and drain regions, said gate electrode forming a Schottky contact with said compound semiconductor substrate;
- and
- an insulating layer formed on said gate electrode and directly on the surface of said compound semiconductor substrate adjacent to said gate electrode, said insulating layer exerting a compression stress on said compound semiconductor substrate, a stress being applied to said compound semiconductor substrate at a boundary portion between said gate electrode and said insulating layer.
4 more elements
A semiconductor integrated circuit device comprising:
- a compound semiconductor substrate formed of a group III-V compound semiconductor having a zinc blend type crystal structure, the surface of said compound semiconductor substrate being a (110) crystal surface;
- a plurality of field effect transistors, each of said field effect transistors including:
- source and drain regions formed at the surface of said compound semiconductor substrate positioned in a direction such that a drain current flows in one of a [110] and [110] direction with respect to said compound semiconductor substrate;
- and
- a gate electrode formed directly on the surface of said compound semiconductor substrate between said source and drain regions, said gate electrode forming a Schottky contact with said compound semiconductor substrate;
- and
- an insulating layer formed on said gate electrode and directly on the surface of said compound semiconductor substrate adjacent to said gate electrode, said insulating layer exerting a stress on said compound semiconductor substrate, a stress being applied to said compound semiconductor substrate at a boundary portion between said gate electrode and said insulating layer.
4 more elements
Dependencies are inferred from the claim text.