Structure for contacting devices in three dimensional circuitry

An integrated circuit component comprising:

• a substrate including at least one trench therein, wherein each trench surrounds a portion of the substrate;
• each trench being surrounded by substrate trench sides and a substrate trench bottom;
• a first insulating layer lining at least in part the trench sides and the trench bottom;
• a first conductive material within each trench surrounding the portion of the substrate surrounded by each trench;
• a polycrystalline silicon outer source connector associated with each trench;
• an outer source region surrounding an associated trench, and being situated substantially along the trench sides and contacting the first conductive material through that trench's associated polycrystalline silicon outer source connector at a first location along the trench sides;
• a polycrystalline silicon inner source connector associated with each trench;
• an inner source region being situated substantially along the trench sides on the portion of the substrate surrounded by the trench and being substantially concentric with a corresponding outer source region, the inner source region contacting the first conductive material through the trench's associated polycrystalline silicon inner source connector at a second location along the trench sides;
• an outer drain region, surrounding an associated trench, and being situated substantially along the trench sides though separated from an associated outer source region so as to define a first channel region between the outer source region and the outer drain region;
• an inner drain region being situated substantially along the trench sides on the portion of the substrate surrounded by the trench and being substantially concentric with a corresponding outer drain region though separated from the inner source region so as to define a second channel region between the inner source region and the inner drain region;
• the drain and source regions being of a predetermined carrier type;
• a second conductive material at least partially within each trench enclosing the first conductive material in an area bound by itself and the substrate sides and being separated from the channel regions by the first insulating layer so as to provide a gate region for the drain regions and the source regions;
• a second insulating layer between the first conductive material and the second conductive material;
• a polycrystalline silicon drain connector associated with each drain;
• a third conductive material contacting each drain region through its associated polycrystalline silicon drain connector, the third conductive material being out of direct contact with the substrate, the first and the second conductive materials;
• and
• a field oxide layer between the third conductive material and the substrate;
• a well region, common to each trench, of the same carrier type as the drain and source regions, within the portion of the substrate surrounded by each trench and within a portion of the substrate around each trench;
• the majority carrier concentration of the substrate substantially surrounding the first conductive material being of a higher carrier concentration than that in the substrate outside of the well in which the outer drain regions and the outer source regions lie, whereby the first conductive material forms a capacitor with the substrate and the first insulating layer and whereby the first conductive material can be accessed by a circuit connection which includes the drain regions, the well region, the channel regions and the source regions, thereby allowing access to all capacitor for testing purposes.